Photoelectric conversion apparatus and image sensor
AssigneeCanon Kabushiki Kaisha
InventorHiraku Kozuka
Life of this patent
Estimating the term…
Abstract
There are provided a photoelectric conversion apparatus which comprises a light-receiving element including a semiconductor substrate of a first conductivity type, a first semiconductor region of a second conductivity type formed on the surface of the semiconductor substrate, a transparent insulating layer formed on the semiconductor substrate, and a light-shielding layer formed on the insulating layer and having an opening with an area larger than the first semiconductor region, and in which the light-receiving element includes a plurality of first semiconductor regions in a single opening, and the first semiconductor regions in the single opening are electrically connected to each other, and an image sensor using the apparatus.
Claims31
A photoelectric conversion apparatus comprising:
- a light-receiving element including
- a region of a first conductivity type,
- a first semiconductor region of a second conductivity type, formed on a surface of said region of a first conductivity type,
- and
- a light-shielding layer having an opening with an area larger than said first semiconductor region,
- wherein said light-receiving element includes a plurality of first semiconductor regions equivalent to said first semiconductor region in a single opening, and said plurality of first semiconductor regions in the single opening are electrically connected to each other.
A photoelectric conversion apparatus comprising:
- a light-receiving element including
- a first region of a first conductivity type,
- a second region of a second conductivity type, formed on a surface of said first region,
- a third region of the second conductivity type, which is formed in said second region and has an impurity concentration higher than said second region,
- a first conductive material electrically connected to said third region,
- and
- a light-shielding layer having an opening with an area larger than said second region.
A photoelectric conversion apparatus comprising:
- a light-receiving element including a region of a first conductivity type,
- a plurality of first semiconductor regions of a second conductivity type, formed on a surface of said region of the first conductivity type, and
- connection means for connecting said plurality of first semiconductor regions so that said plurality of first semiconductor regions and said region of the first conductivity type forms a plurality of photoelectric conversion portions which are electrically connected to each other in parallel so as to perform photoelectric conversion.
Dependencies are inferred from the claim text.