Silicon-on-insulator insulated gate bipolar transistor
AssigneeInfineon Technologies AG
InventorJenoe Tihanyi
Life of this patent
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Abstract
A silicon-on-insulator insulated gate bipolar transistor (SOI-IGBT) has a channel zone of a first conductivity type, at least one cell zone of a second conductivity type, and at least one intermediate zone of the first conductivity type which delimits the SOI-IGBT. The channel zone, the cell zone, and the intermediate zone are disposed in an insulator layer, which is provided on a semiconductor body of the first conductivity type. The channel zone, the cell zone, and the intermediate zone are connected to the semiconductor body via openings provided in the insulator layer. A semiconductor configuration having a CMOS circuit integrated with an SOI-IGBT is also provided.
Claims12
A silicon-on-insulator insulated gate bipolar transistor (SOI-IGBT), comprising:
- a semiconductor body of a first conductivity type;
- an insulator layer formed on said semiconductor body and having openings formed therein;
- a channel zone of the first conductivity type, a cell zone of a second conductivity type, and an intermediate zone of the first conductivity type, said intermediate zone partially delimiting the SOI-IGBT;
- and
- said channel zone, said cell zone, and said intermediate zone provided at least partially in said insulator layer and contacting said semiconductor body via said openings.
A semiconductor configuration, comprising:
- a CMOS circuit;
- and
- a SOI-IGBT integrated with said CMOS circuit, said SOI-IGBT having a semiconductor body of a first conductivity type, an insulator layer formed on said semiconductor body and having openings formed therein, a channel zone of the first conductivity type, a cell zone of a second conductivity type, and an intermediate zone of the first conductivity type, said intermediate zone partially delimiting said SOI-IGBT, said channel zone, said cell zone, and said intermediate zone provided at least partly in said insulator layer and connected to said semiconductor body via said openings in said insulator layer.
Dependencies are inferred from the claim text.