Thin film semiconductor device for active matrix panel
AssigneeSony Corporation
InventorsToshihiko Iwanaga, Masumitsu Ino, Kikuo Kaise, Takenobu Urazono, Hiroyuki Ikeda
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Abstract
A thin film semiconductor device comprising a thin film transistor (TFT) having a thin film semiconductor on an insulation substrate to define an element region, and a hygroscopic interlayer insulating layer which covers said element, a hydrogenation treatment which comprises said interlayer insulating layer provided thereon a capping layer for blocking hydrogen diffusion, so that water entrapped by the interlayer insulating layer may be decomposed to generate hydrogen which is allowed to diffuse into the thin film transistor provided on the side opposite to that of the capping layer.
Claims12
A thin film semiconductor device comprising:
- an insulation substrate:
- a thin film transistor formed on said insulation substrate and having a polycrystalline semiconductor layer which defines an active region;
- a hygroscopic interlayer insulating layer covering said active region;
- and
- a cap layer for blocking hydrogen diffusion, which is formed on said interlayer insulating layer.
A thin film semiconductor device comprising:
- an insulating substrate;
- a thin film transistor formed on the insulation substrate having an active region;
- a hygroscopic interlayer insulating layer formed on the active region;
- and a cap layer substantially impermeable to hydrogen formed on the interlayer insulating layer.
Dependencies are inferred from the claim text.