Structure of a capacitor section of a dynamic random-access memory

A semiconductor device comprising:

• a first insulating film having a first depression and a second depression;
• a second insulating film contacting the first insulating film and located on a side of the first depression;
• a third insulating film contacting the first insulating film and located on a side of the second depression;
• a first electrode located in the first depression, the second insulating film being located between the first electrode and the first insulating film;
• a second electrode located in the second depression, the third insulating film being located between the second electrode and the first insulating film;
• a fourth insulating film located on the first electrode;
• a fifth insulating film located on the second electrode;
• a third electrode located on the fourth insulating film;
• and
• a fourth electrode located on the fifth insulating film;
• wherein a size of the first depression is greater than a width between the first and second depressions, and a size of the second depression is greater than a width between the first and second depressions.

A semiconductor device comprising:

• a first insulating film having a first contact plug and a second contact plug;
• a second insulating film having a first trench which is located on the first contact plug and a second trench which is located on the second contact plug;
• a third insulating film contacting the second insulating film and located on a side of the first trench of the second insulating film;
• a first electrode located in the first trench of the second insulating film, the third insulating film being located between the first electrode and the second insulating film;
• a fourth insulating film located on the first electrode;
• a second electrode located on the fourth insulating film;
• a fifth insulating film located on a side of the second trench;
• and
• a third electrode located on the second trench, wherein the fifth insulating film is located between the third electrode and the second insulating film, the fourth insulating film is located on the third electrode, and the second electrode is located on the fourth insulating film.

A semiconductor device comprising:

• a first insulating film having a first contact hole and a second contact hole;
• a second insulating film having a first trench which is located on the first contact hole and a second trench which is located on the second contact hole;
• a third insulating film contacting the second insulating film and located on a side of the first trench of the second insulating film;
• a fourth insulating film contacting the second insulating film and located on a side of the second trench of the second insulating film;
• a first electrode located in the first trench of the second insulating film, said first electrode being provided along a bottom face and an inner wall of the first trench, and the third insulating film being located between the first electrode and the second insulating film;
• a second electrode located in the second trench of the second insulating film, said second electrode being provided along the bottom face and the inner wall of the first trench, and the fourth insulating film being located between the second electrode and the second insulating film;
• a fifth insulating film located on the first and second electrodes;
• and
• a third electrode located on the fifth insulating film.

A semiconductor device comprising:

• a first insulating film having a contact hole;
• a second insulating film contacting the first insulating film and having a trench which is located on the contact hole;
• a third insulating film contacting the first insulating film and being located on a side of the trench of the second insulating film;
• a first electrode contacting the first insulating film and located in the trench of the second insulating film, the third insulating film being located between the first electrode and the second insulating film;
• a fourth insulating film located on the first electrode;
• and
• a second electrode located on the fourth insulating film.