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US 6,150,683 AGranted
CMOS-based color pixel with reduced noise in the blue signal
AssigneeFoveon, Inc.
InventorsRichard Billings Merrill, Kevin Brehmer
Life of this patent
Estimating the term…
Abstract
The blue signal of a CMOS-based color pixel is increased with respect to the red and green signals by lowering the doping concentration of the surface regions of the pn-junction photodiodes that are used in the blue imaging cells with respect to the surface regions of the pn-junction photodiodes that are used in the red and green imaging cells.
Claims20
A color pixel formed in a substrate of a first conductivity type, the pixel comprising:
- a first region of a second conductivity type formed in the substrate, the first region having a doping concentration;
- a second region of the second conductivity type formed in the substrate, the second region having a doping concentration, the doping concentration of the first region and the doping concentration of the second region being substantially equal;
- a third region of the second conductivity type formed in the substrate, the third region having a doping concentration, the doping concentration of the third region being substantially less than the doping concentration of the first region;
- a first reset transistor having a source connected to the first region,
- a second reset transistor having a source connected to the second region, and
- a third reset transistor having a source connected to the third region.
3 more elements
A color pixel formed in a substrate of a first conductivity type, the pixel comprising:
- a first well of the first conductivity type formed in the substrate;
- a first region of a second conductivity type formed in the first well, the first region having a doping concentration;
- a second region of the second conductivity type formed in the first well, the second region having a doping concentration, the doping concentration of the first region and the doping concentration of the second region being substantially equal;
- a second well of the second conductivity type formed in the substrate, the second well having a doping concentration, the doping concentration of the second well being substantially less than the doping concentration of the first region;
- a first reset transistor having a source connected to the first region,
- a second reset transistor having a source connected to the second region, and
- a third reset transistor having a source connected to the second well.
4 more elements
A color pixel formed in a substrate of a first conductivity type, the pixel comprising:
- a well of the first conductivity type formed in the substrate;
- a first region of a second conductivity type formed in the first well, the first region having a doping concentration;
- a second region of the second conductivity type formed in the first well, the second region having a doping concentration, the doping concentration of the first region and the doping concentration of the second region being substantially equal;
- a third region of the second conductivity type formed in the substrate, the third region having a doping concentration, the doping concentration of the third region being substantially less than the doping concentration of the first region;
- a first reset transistor having a source connected to the first region,
- a second reset transistor having a source connected to the second region, and
- a third reset transistor having a source connected to the second well.
4 more elements
A method for forming a color pixel in a substrate of a first conductivity type, the method comprising the steps of:
- forming a first region of a second conductivity type in the substrate, the first region having a doping concentration;
- forming a second region of the second conductivity type in the substrate, the second region having a doping concentration, the doping concentration of the first region and the doping concentration of the second region being substantially equal;
- forming a third region of the second conductivity type in the substrate, the third region having a doping concentration, the doping concentration of the third region being substantially less than the doping concentration of the first region;
- forming a first reset transistor having a source connected to the first region,
- forming a second reset transistor having a source connected to the second region, and
- forming a third reset transistor having a source connected to the third region.
3 more elements
A method for forming a color pixel in a substrate of a first conductivity type, the method comprising the steps of:
- forming a first well of the first conductivity type in the substrate;
- forming a first region of a second conductivity type in the first well, the first region having a doping concentration;
- forming a second region of the second conductivity type in the first well, the second region having a doping concentration, the doping concentration of the first region and the doping concentration of the second region being substantially equal;
- forming a second well of the second conductivity type in the substrate, the second well having a doping concentration, the doping concentration of the second well being substantially less than the doping concentration of the first region;
- forming a first reset transistor having a source connected to the first region,
- forming a second reset transistor having a source connected to the second region, and
- forming a third reset transistor having a source connected to the second well.
4 more elements
A method for forming a color pixel in a substrate of a first conductivity type, the method comprising the steps of:
- forming a well of the first conductivity type in the substrate;
- forming a first region of a second conductivity type in the first well, the first region having a doping concentration;
- forming a second region of the second conductivity type in the first well, the second region having a doping concentration, the doping concentration of the first region and the doping concentration of the second region being substantially equal;
- forming a third region of the second conductivity type in the substrate, the third region having a doping concentration, the doping concentration of the third region being substantially less than the doping concentration of the first region;
- forming a first reset transistor having a source connected to the first region,
- forming a second reset transistor having a source connected to the second region, and
- forming a third reset transistor having a source connected to the second well.
4 more elements
Dependencies are inferred from the claim text.