Method of crystal growth of compound semiconductor, compound semiconductor device and method of manufacturing the device
AssigneeSumitomo Electric Industries, Ltd.
InventorsSo Tanaka, Akihiro Moto, Tatsuya Tanabe, Nobuyuki Ikoma
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Abstract
A semiconductor layer consisting of Ga.sub.1-x In.sub.x N.sub.y As.sub.1-y and/or GaN.sub.y As.sub.1-y and formed by incorporating nitrogen into a group III-V mixed crystal semiconductor is provided on a GaAs substrate. The hydrogen concentration in the semiconductor is kept at 5.times.10.sup.18 atoms/cm.sup.3 or below.
Claims8
A compound semiconductor device, comprising:
- a GaAs semiconductor substrate;
- and
- a semiconductor layer that is provided on said GaAs semiconductor substrate, that consists essentially of Ga.sub.1-x In.sub.x N.sub.y As.sub.1-y (0<x.ltoreq.0.35, 0<y.ltoreq.0.15) and/or GaN.sub.y As.sub.1-y (0<y.ltoreq.0.07) together with hydrogen, and that is formed on said substrate by incorporating nitrogen into a group III-V mixed crystal semiconductor, wherein
- a hydrogen concentration of said hydrogen in said semiconductor layer is not greater than 5.times.10.sup.18 atoms/cm.sup.3.
A method of manufacturing a compound semiconductor device, comprising the steps of:
- preparing a GaAs semiconductor substrate;
- forming on said GaAs semiconductor substrate a semiconductor layer consisting of Ga.sub.1-x In.sub.x N.sub.y As.sub.1-y (0<x.ltoreq.0.35;
- 0<y.ltoreq.0.15) and/or GaN.sub.y As.sub.1-y (0<y.ltoreq.0.07) together with hydrogen, said layer being formed by incorporating nitrogen into a group III-V mixed crystal semiconductor, and said layer including at least 5.times.10.sup.18 atoms/cm.sup.3 ;
- and
- heat treating said semiconductor layer at a temperature from 800.degree. C. to 1100.degree. C. in a gas atmosphere comprising at least one gas selected from the group consisting of arsenic-containing gases and phosphorous-containing gases to reduce a concentration of said hydrogen in said semiconductor layer.
A method of manufacturing a compound semiconductor device, comprising the steps of:
- preparing a GaAs semiconductor substrate;
- forming on said GaAs semiconductor substrate a semiconductor layer consisting of Ga.sub.1-x In.sub.x N.sub.y As.sub.1-y (0<x.ltoreq.0.35;
- 0<y.ltoreq.0.15) and/or GaN.sub.y As.sub.1-y (0<y.ltoreq.0.07) together with hydrogen, said layer being formed by incorporating nitrogen into a group III-V mixed crystal semiconductor, and said layer including at least 5.times.10.sup.18 atoms/cm.sup.3 of said hydrogen with at least some of said hydrogen bonded to at least some of said nitrogen;
- and
- heat treating said semiconductor layer at a temperature in a range from 500.degree. C. to below 800.degree. C. in a gas atmosphere comprising at least one gas selected from the group consisting of arsenic-containing gases and phosphorous-containing gases, to break bonds between said nitrogen and said hydrogen in said semiconductor layer.
A method of manufacturing a compound semiconductor device, comprising the steps of:
- preparing a GaAs semiconductor substrate;
- forming on said GaAs semiconductor substrate a semiconductor layer consisting of Ga.sub.1-x In.sub.x N.sub.y As.sub.1-y (0<x.ltoreq.0.35;
- 0<y.ltoreq.0.15) and/or GaN.sub.y As.sub.1-y (0<y.ltoreq.0.07) and less than 5.times.10.sup.18 atoms/cm.sup.3 of hydrogen, and being formed by incorporating nitrogen into a group III-V mixed crystal semiconductor;
- and
- heat treating said semiconductor layer at a temperature in a range from 500.degree. C. to 1100.degree. C. in a gas atmosphere comprising at least one gas selected from the group consisting of arsenic-containing gases and phosphorous-containing gases, to improve crystal and optical characteristics of said semiconductor layer.
Dependencies are inferred from the claim text.