Semiconductor component with a control electrode for modulating the conductivity of a channel area by means of a magnetoresistor structure

A semiconductor component having a control structure for modulating the conductivity of a channel region, the semiconductor component comprising:

• a semiconductor body having a first principal surface and a second principal surface, the first principal surface provided with a first electrode and the second principal surface at a control structure side of the semiconductor component provided with a semiconductor layer of a first conductivity type;
• a first semiconductor region of the first conductivity type and a second semiconductor region of a second conductivity type formed at a surface of the semiconductor layer on the control structure side, wherein a region of the second semiconductor region which lies between the first semiconductor region and a part of the semiconductor layer outside of the second semiconductor region is provided as a channel and is present at the surface of the semiconductor layer;
• a second electrode contacting the first and second semiconductor regions outside the region provided for the channel;
• a gate electrode arranged electrically insulated from the semiconductor layer and parallel to the surface of the semiconductor at the control structure side, the gate electrode covering at least a region provided for the channel;
• and
• a third electrode arranged electrically insulated from the gate electrode and parallel to the surface of the semiconductor layer at the control structure side at a lateral spacing from the gate electrode with respect to a plane of the surface as well as spaced from the first and second semiconductor regions and electrically insulated from the semiconductor layer at least in a region adjoining the gate electrode, wherein the second and third electrodes are electrically connected to one another or charged with a same potential.