Back to results
US 6,150,674 AGranted
Semiconductor device having Al.sub.x Ga.sub.1-x N (0<x<1) substrate
AssigneeMatsushita Electronics Corporation
InventorsMasaaki Yuri, Osamu Imafuji, Shinji Nakamura, Kenji Orita
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a substrate formed of Al.sub.x Ga.sub.1-x N (0<x<1) and a first semiconductor layer provided on the substrate and formed of a III-group nitride semiconductor containing Al. The difference between an Al ratio of the substrate and an Al ratio of the first semiconductor layer is less than about 0.15.
Claims4
A semiconductor device, comprising:
- a substrate formed of Al.sub.x Ga.sub.1-x N (0<x<1);
- and
- a first semiconductor layer provided on the substrate and formed of a III-group nitride semiconductor containing Al,
- wherein the difference between an Al ratio of the substrate and an Al ratio of the first semiconductor layer is less than about 0.15.
1 more element
Dependencies are inferred from the claim text.