Semiconductor device having high channel mobility and a high breakdown voltage for high power applications

A transistor of SiC comprising:

• an n-type drift layer arranged on a substrate;
• a p-type base layer on the drift layer;
• an n-type source region formed on the base layer and having ends limited by the base layer;
• an insulating layer arranged on top of the base layer and extending laterally from at least the source region to the drift layer;
• a source on top of the source region;
• a gate electrode on top of the insulating layer, the base layer being low doped in a second region next to the interface to the insulating layer and highly doped in a first region under the second region and next to the drift layer;
• and
• an additional n-type layer extending from a part of the second region of the base layer to the drift layer, whereby upon applying a voltage to the gate electrode a conducting inversion channel is formed extending substantially laterally in the base layer at an interface to the insulating layer for electron transport from the source to a drain and the additional n-type layer conducts electrons moving in the conducting inversion channel from the source region to the drift layer.