Method of making an ultra thin silicon nitride film
AssigneeAdvanced Micro Devices, Inc.
InventorsSey-Ping Sun, Mark I. Gardner, Shengnian Song
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Abstract
Various methods of fabricating a circuit structure utilizing silicon nitride are provided. In one aspect, a method of fabricating a circuit structure is provided that includes forming a silicon nitride film on a silicon surface, annealing the silicon nitride film in an ammonia ambient and annealing the silicon nitride film in a nitrous oxide ambient to form a thin oxide layer at an interface between the silicon nitride film and the silicon surface. The process of the present invention enables the manufacture of thin silicon nitride films with highly uniform morphology for use as gate dielectrics or other purposes. The thin oxide film is self-limiting in thickness and improves differential mechanical stresses.
Claims18
A method of fabricating a circuit structure, comprising:
- forming a silicon nitride film on a silicon surface;
- annealing the silicon nitride film in an ammonia ambient;
- and
- forming a thin oxide layer at an interface between the silicon nitride film and the silicon surface by annealing the silicon nitride film in a nitrous oxide ambient.
A method of fabricating a circuit structure on a silicon substrate, comprising:
- forming a silicon nitride film on the substrate;
- annealing the silicon nitride film in an ammonia ambient;
- and
- forming a thin oxide layer at an interface between the silicon nitride film and the silicon substrate by annealing the silicon nitride film in a nitrous oxide ambient.
A method of fabricating a gate dielectric on a silicon substrate, comprising:
- depositing a silicon nitride film on the substrate by plasma enhanced chemical vapor deposition;
- annealing the silicon nitride film in an ammonia ambient;
- and
- forming a thin oxide layer at an interface between the silicon nitride film and the substrate by annealing the silicon nitride film in a nitrous oxide ambient.
Dependencies are inferred from the claim text.