Thin film transistor fabrication method, active matrix substrate fabrication method, and liquid crystal display device

Abstract

To provide a TFT fabrication method capable of forming on a large-surface area substrate with uniform film thickness and at high deposition rate of film, while being a low-temperature process, a high-quality gate insulation film having good charge behavior by forming a silicon oxide film by a thin film transistor fabrication method having a channel region connected to a source region and a drain region, and a gate electrode confronting with the channel region through a gate insulation film, wherein in the formation process of said gate insulation film using plasma chemical vapor deposition under the condition that tetraethoxysilane is used as the feed gas to provide the silicon and the distance between electrodes for generating the plasma is about 15 mm or less.

Dependencies are inferred from the claim text.