US 6,150,275 AGranted

Micromechanical system fabrication method using (111) single crystalline silicon

OwnerDong-Il Cho, Sangwoo Lee +1inventors

InventorsDong-Il Cho, Sangwoo Lee, Sangjun Park

Life of this patent

Estimating the term…

Loading patent…

Abstract

Disclosed is a micromechanical system fabrication method using (111) single crystalline silicon as a silicon substrate and employing a reactive ion etching process in order to pattern a microstructure that will be separated from the silicon substrate and a selective release-etching process utilizing an aqueous alkaline solution in order to separate the microstructure from the silicon substrate. According to the micromechanical system fabrication method of the present invention, the side surfaces of microstructures can be formed to be vertical by employing the RIE technique. Furthermore, the microstructures can be readily separated from the silicon substrate by employing the selective release-etching technique using slow etching {111} planes as the etch stop in an aqueous alkaline solution. In addition, etched depths can be adjusted during the RIE step, thereby adjusting the thickness of the microstructure and the spacing between the microstructure and the silicon substrate.

Claims2

Dependent claims

A micromechanical system fabrication method using (111) single crystalline silicon as a silicon substrate, comprising:

(a) a first reactive ion etching step to the front side of the silicon substrate, in which the etching depth is the thickness of microstructures to be separated from the silicon substrate;
(b) a passivation step to the side walls of the microstructures which are patterned by the said first reactive ion etching step;
(c) a second reactive ion etching step to the front side of the microstructures of which side walls are protected by the said passivation step, in which the etching is performed to the vertical direction of the microstructures and the etching depth is the spacing between the silicon substrate and the microstructures to be released from the silicon substrate;
and
(d) a selective release etching step in aqueous alkaline solution, in which the etching process is performed in the lateral direction of the spacing parts between the silicon substrate and the microstructures to be released, and in which all parts of the microstructures to be released are released in this single step.

2 more elements

Dependencies are inferred from the claim text.