Method for forming barrier layer for copper metallization
AssigneeKabushiki Kaisha Toshiba
InventorsTetsuo Matsuda, Tadashi Iijima, Hisashi Kaneko
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Abstract
A method comprises forming a barrier layer for copper metallization, selectively forming a silicon film on a surface of copper wiring formed on the main surface of a semiconductor substrate, and reacting the silicon film with a non-copper metal and/or nitrogen to form a barrier layer in a self-aligned manner relative to the copper wiring. In the method, the capacitance increase in the copper wirings formed is prevented, and the barrier layer formed has a satisfactory barrier property of protecting the copper wirings.
Claims7
A method for forming a barrier layer for copper metallization, which comprises selectively forming a silicon film on a surface of copper wiring formed on a main surface of a semiconductor substrate, and reacting the silicon film with at least one substance that does not substantially contain copper to form a barrier layer.
A method for forming a barrier layer for copper metallization, which comprises selectively forming a silicon film on a surface of copper wiring formed on a main surface of a semiconductor substrate, and substituting the silicon film with a metal that does not substantially contain copper to form a barrier layer.
Dependencies are inferred from the claim text.