Barrier materials for metal interconnect
AssigneeAdvanced Micro Devices, Inc.
InventorsJohn A. Iacoponi, Shekhar Pramanick
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Abstract
A method is provided for manufacturing a semiconductor device by: depositing a tantalum layer to line the channels and vias of a semiconductor; depositing a tungsten nitride layer at a low temperature on the tantalum layer; and depositing a copper conductor layer on the tungsten nitride layer. The tungsten nitride acts as a highly efficient copper barrier material with high resistivity while the tantalum layer acts as a conductive barrier material to reduce the overall resistance of the barrier layer.
Claims11
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a conductive barrier layer on a channel in a semiconductor wherein said conductive barrier layer is a refractory metal;
- forming a high barrier effectiveness layer on said conductive barrier layer wherein said high barrier effectiveness layer is a high resistivity barrier material and wherein said high barrier effectiveness layer contains a barrier dopant of between about 40% and 60% by atomic concentration;
- and
- forming a conductive layer on said high barrier effectiveness layer.
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a conductive barrier layer on a channel in a semiconductor wherein said conductive barrier layer is selected from a group comprising tantalum, titanium, tungsten, an alloy thereof and a combination thereof;
- forming a high barrier effectiveness layer on said conductive barrier layer wherein said high barrier effectiveness layer is tungsten nitride material and wherein said high barrier effectiveness layer contains nitrogen of between 45% and 55% by atomic concentration;
- and
- forming a conductive layer on said high barrier effectiveness layer.
Dependencies are inferred from the claim text.