Plasma deposited fluorinated amorphous carbon films
AssigneeInternational Business Machines Corporation
InventorsThomas Weller Mountsier, Michael J. Shapiro
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Abstract
An interlevel dielectric stack for use in semiconductor devices is provided. The interlevel stack includes a bottom adhesion layer, a middle layer composed of a fluorinated amorphous carbon film, and a top adhesion layer. The bottom and top adhesion layers are composed of a silicon carbide material containing hydrogen. The dielectric stack is subjected to rigorous adhesion and thermal testing. A single continuous process for depositing the dielectric stack in a high density plasma reactor is also provided.
Claims7
A process of producing an interlevel dielectric stack on a semiconductor substrate, comprising:
- introducing a semiconductor substrate in a high density plasma reactor;
- providing a flow of SiH.sub.4 and a hydrocarbon gas in the reactor;
- providing a flow of one or more fluorinated amorphous carbon films precursor gases in the reactor;
- and
- providing a flow of SiH.sub.4 and a hydrocarbon gas in the reactor.
A process of producing an interlevel dielectric stack on a semiconductor substrate, comprising:
- introducing a semiconductor substrate in a high density plasma reactor;
- providing a flow of SiH.sub.4 and C.sub.2 H.sub.2 in the reactor at approximately equal flow rates to deposit a bottom adhesion layer;
- next, providing a flow of fluorinated amorphous carbon film precursor in the reactor, such precursor flow comprising C.sub.6 F.sub.6 and such flow overlapping the flow of SiH.sub.4 and C.sub.2 H.sub.2 for a time period, such time period being a small fraction of the total time for flow of fluorinated amorphous carbon film precursor;
- and
- finally, providing a flow of SiH.sub.4 and C.sub.2 H.sub.2 at equal flow rates in the reactor to deposit a top adhesion layer, such flow overlapping the flow of fluorinated amorphous carbon film precursor for a time period equal to said time period.
Dependencies are inferred from the claim text.