Method for wiring of a semiconductor device
AssigneeRohm Co., Ltd.
InventorTakayuki Kito
Life of this patent
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AssigneeRohm Co., Ltd.
InventorTakayuki Kito
Estimating the term…
A perimeter gate wiring 52 comprises a contact portion 54 and an interconnecting portion 56 having narrower width than the contact portion 54 which connects the contact portion 54 mutually. And the perimeter gate wiring 52 is connected electrically with the gate perimeter portion 66 at the contact portion 54. A source wiring perimeter portion 58 comprises a contact portion 60 and an interconnecting portion 62 having narrower width than the contact portion 60 which connects the contact portion 60 mutually. And the source wiring perimeter portion 58 is connected electrically with a perimeter diffusion layer 74 in the contact portion 60. The contact portion 54 of the perimeter gate wiring 52 and the interconnecting portion 62 of the source wiring perimeter portion 58 are provided adjacently. Also, the interconnecting portion 56 of the perimeter gate wiring 52 and the contact portion 60 of the source wiring perimeter portion 58 are provided with one another adjacently. So that, it is possible to narrow a width of both the perimeter gate wiring 52 and the source wiring perimeter portion 58 with maintaining contact between the gate perimeter portion 66 and the like.
A method for wiring a semiconductor device having regions to be connected, each of which being made of semiconducting substance or conductive substance, being provided independently, and wirings each of which being connected electrically to each of the regions to be connected,
Dependencies are inferred from the claim text.