Method of making Os and W/WC/TiC ohmic and rectifying contacts on SiC

A method of forming an electrical contact to a surface of a SiC semiconductor substrate, comprising:

• doping an area of the substrate;
• depositing a layer comprising metallic osmium (Os) on the surface of the substrate over the doped area to form a contact to the substrate;
• and
• annealing the substrate after depositing the Os layer to bond the Os layer to the SiC substrate at said surface, thereby forming an electronic junction between the layer and the doped area of the substrate that is stable to over 1000.degree. C.

A method of forming an electrical contact to a surface of a SiC semiconductor substrate, comprising:

• doping an area of the substrate;
• depositing a titanium carbide (TiC) layer on the surface of the substrate over the doped area to form a contact having an electronic interface to the substrate;
• depositing a tungsten carbide (WC) layer on the titanium carbide (TiC) layer;
• and
• depositing a metallic tungsten (W) layer on the tungsten carbide (WC) layer.