Semiconductor processing methods, methods of forming capacitors, methods of forming silicon nitride, and methods of densifying silicon nitride layers

A method of forming Si.sub.3 N.sub.4 comprising:

• providing a substrate in a CVD reactor;
• feeding a silicon precursor and a nitrogen precursor into the reactor to chemical vapor deposit Si.sub.3 N.sub.4 onto the substrate;
• substantially ceasing the chemical vapor depositing;
• and
• treating the Si.sub.3 N.sub.4 with atomic nitrogen in the substantial absence of silicon-containing gases, the atomic nitrogen being of a sufficient concentration to densify the Si.sub.3 N.sub.4 within a period of time between about 10 minutes to about 30 minutes.

A method of forming Si.sub.3 N.sub.4 comprising:

• providing a substrate in a CVD reactor;
• feeding a silicon precursor and a nitrogen precursor into the reactor to chemical vapor deposit Si.sub.3 N.sub.4 onto the substrate;
• substantially ceasing the chemical vapor depositing;
• and
• treating the Si.sub.3 N.sub.4 with atomic nitrogen to densify the Si.sub.3 N.sub.4 without increasing a thickness of the Si.sub.3 N.sub.4 by more than about 10 Angstroms;
• the treating consisting of the atomic nitrogen reacting with silicon of the silicon nitride layer.

A semiconductor processing method comprising:

• providing a silicon-containing substrate having a surface;
• forming a silicon nitride layer at the surface of the silicon-comprising substrate, the silicon nitride layer being formed to a thickness and having one or more holes extending through it to the underlying silicon-containing substrate;
• and
• after forming the silicon nitride layer, exposing the silicon nitride layer to atomic nitrogen, the atomic nitrogen being of a sufficient concentration to close the one or more holes within a period of time less than about 30 minutes.

A method of forming a capacitor comprising:

• providing a silicon-containing first capacitor electrode having a surface;
• forming a dielectric layer over the surface of the first capacitor electrode, the forming the dielectric layer comprising:
• forming a silicon nitride layer at the surface of the silicon-containing first capacitor electrode, the forming the silicon nitride layer comprising chemical vapor deposition using a silicon precursor and a nitrogen precursor, the silicon nitride layer being formed to a thickness and having one or more pinholes extending into it;
• and
• after forming the silicon nitride layer, exposing the silicon nitride layer to atomic nitrogen, the atomic nitrogen being of a sufficient concentration to close the one or more pinholes within a period of time less than about 30 minutes;
• and
• forming a second capacitor electrode over the dielectric layer;
• the first capacitor electrode, second capacitor electrode and dielectric layer together comprising a capacitor.

A method of forming a capacitor comprising:

• providing a silicon-containing first capacitor electrode having a surface;
• forming a dielectric layer over the surface of the first capacitor electrode, the forming the dielectric layer comprising:
• forming a silicon nitride layer at the surface of the silicon-containing first capacitor electrode, the forming the silicon nitride layer comprising chemical vapor deposition using a silicon precursor and a nitrogen precursor, the silicon nitride layer being formed to a thickness and having one or more pinholes extending into it;
• and
• after forming the silicon nitride layer, exposing the silicon nitride layer to atomic nitrogen to close the one or more pinholes, the exposing not increasing the thickness of the nitride layer by more than about 10 Angstroms and comprising substantially not exposing the nitride layer to a silicon-containing gas, the silicon nitride layer being maintained at a temperature of at least about 500.degree. C. to less than 700.degree. C. during the exposing, the atomic nitrogen being formed by microwave excitation of N.sub.2, the atomic nitrogen being the only reactive species reacting with the silicon nitride layer to close the one or more pinholes;
• and
• forming a second capacitor electrode over the dielectric layer;
• the first capacitor electrode, second capacitor electrode and dielectric layer together comprising a capacitor.