Shallow trench isolation method utilizing combination of spacer and fill
AssigneeInternational Business Machines Corporation
InventorsRamachandra Divakaruni, Jeffrey P. Gambino, Jack A. Mandelman, Carl J. Radens, William R. Tonti
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Abstract
A method for forming an isolation trench region in a semiconductor substrate includes providing the trench region in the semiconductor substrate, adding spacer material at least to sidewalls of the trench region, and etching the trench region at a bottom surface thereof to extend the trench region below the bottom surface and form a crevice region. The spacer material may be subsequently heated such that the spacer material flows from the sidewalls and into the crevice region.
Claims29
A method of forming an isolation trench region in a semiconductor substrate, the method comprising:
- providing a trench region in said semiconductor substrate, said trench region having sidewalls extending to a bottom surface;
- adding spacer material at least along said sidewalls of said trench region;
- etching said trench region at said bottom surface to extend said trench region beyond said bottom surface and form a crevice region;
- and
- heating at least said spacer material such that said spacer material flows from said sidewalls and into said crevice region.
A method of forming an isolation trench region in a substrate, the method comprising:
- forming a trench region in said substrate, said trench region having walls, and extending at least from a first surface of said substrate toward a second surface of said substrate;
- covering portions of said walls of said trench region with spacer material;
- forming an extended area of said trench region in a direction toward said second surface of said substrate;
- and
- heating said spacer material to flow the spacer material to fill said extended area of said trench region with said spacer material previously covering portions of said walls of said trench region.
A method of forming a trench region in a substrate, the method comprising:
- providing a trench region in said substrate;
- adding spacer material into said trench region;
- extending said trench region further into said substrate so as to form a crevice region;
- and
- heating said spacer material such that the spacer material flows and enters said crevice region.
A method of forming an isolation trench region in a semiconductor substrate, the method comprising:
- providing a trench region in said semiconductor substrate, said trench region having sidewalls;
- adding a nitride layer on said sidewalls of said trench region;
- adding spacer material in said trench region;
- etching said trench region at a bottom surface thereof to extend said trench region beyond the bottom surface of the trench region and form a crevice region;
- and
- heating at least said spacer material such that said spacer material flows into said crevice region.
Dependencies are inferred from the claim text.