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US 6,150,200 AGranted
Semiconductor device and method of making
AssigneeMotorola, Inc.
InventorSteven L. Merchant
Life of this patent
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Abstract
A semiconductor device (10) is formed in a semiconductor substrate (11) and an epitaxial layer (14). The semiconductor device includes a p-type body region (16), a source region (17), a channel region (19), and a drain region (34) formed in the epitaxial layer (14). A doped region (13) is formed in the semiconductor substrate (11) to reduce the drift resistance of the semiconductor device (10). The drain region (34) is formed from a plurality of doped regions (30-33) that can be formed with high energy implants.
Claims7
A method of making a semiconductor device comprising the step of:
- providing a semiconductor substrate having a substrate surface;
- forming a first doped region in the semiconductor substrate, wherein the first doped region is of a first conductivity type;
- forming a second doped region of a second conductivity type in the semiconductor substrate, wherein the second doped region extends from the substrate surface and is overlying at least a portion of the first doped region;
- forming a source region of the first conductivity type in the second doped region, wherein the second doped region isolates the source region from the semiconductor substrate to provide a channel region;
- forming a gate structure overlying at least a portion of the channel region;
- and
- performing a plurality of implantation processes to form a drain region of the first conductivity type that extends from the substrate surface and contacts the first doped region in the semiconductor substrate.
4 more elements
Dependencies are inferred from the claim text.