Method of formation of buried mirror semiconductive device

A method for forming a semiconductor device for reflecting electromagnetic radiation having wavelength .lambda., the method comprising the steps of:

• forming an opening in a semiconductor substrate;
• depositing at least two reflective layers including a first reflective layer and a second reflective layer in the opening, the first reflective layer having a first index of refraction and the second reflective layer having a second index of refraction, wherein the first index of refraction is different from the second index of refraction;
• polishing portions of the at least two reflective layers such that the at least two reflective layer are substantially coplanar with the substrate;
• forming a single-crystalline silicon layer so as to overlie the at least one reflective layer;
• and
• forming a photo device on a portion of the single-crystalline silicon layer overlying the at least two reflective layers.

A method for forming a semiconductor device for reflecting electromagnetic radiation having wavelength X, the method comprising the steps of:

• forming at least one reflective layer on a semiconductor substrate, the at least one reflective layer having sidewalls defining an outer periphery of the at least one reflective layer;
• forming sidewall spacers along the outer periphery of the at least one reflective layer;
• and
• forming a semiconductive layer on the semiconductor substrate so as to surround the sidewalls of the at least one reflective layer;
• removing the sidewall spacers;
• processing the semiconductive layer to form an improved semiconductive layer;
• and
• growing semiconductive material from the improved semiconductive layer so as to overlie the at least one reflective layer.