Thick-film circuits and metallization process
AssigneeDelphi Technologies, Inc.
InventorsFrans Peter Lautzenhiser, Joel Franklin Downey, Marion Edmond Ellis
Life of this patent
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AssigneeDelphi Technologies, Inc.
InventorsFrans Peter Lautzenhiser, Joel Franklin Downey, Marion Edmond Ellis
Estimating the term…
16 A thick-film circuit (10) includes an electrically conductive substrate (12), such as stainless steel, and a first layer of a gold-rich conductor (15) applied directly thereon. The gold layer is fired in a non-oxidizing atmosphere, such as nitrogen, to ensure a solid mechanical and electrical connection between the gold and the substrate. A next layer of a silver composition (20) containing a first proportion of silver to a conductive metal is directly applied to the gold layer (15). Preferably, the composition (20) includes palladium in equal parts with the silver to achieve a secure mechanical and electrical contact with the gold layer with a minimum resistivity. A silver-rich layer (23) is then applied directly onto the intermediate layer. This silver-rich layer (23) is a composition of silver and the conductive metal in a second proportion greater than the first proportion. In one embodiment, this second proportion is three parts silver to one part palladium by weight. The thick-film stack-up (10) provides a minimum resistance conductive path between electrical components mounted on the silver-rich layer (23) and the conductive substrate (12).
A thick-film circuit comprising:
A method for thick-film metallization comprising:
Dependencies are inferred from the claim text.