Semiconductor member and process for preparing semiconductor member
AssigneeCanon Kabushiki Kaisha
InventorTakao Yonehara
Life of this patent
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Abstract
A semiconductor member in which a non-porous monocrystalline semiconductor region is arranged on a porous monocrystalline semiconductor region. An insulating material is bonded onto the surface of the non-porous monocrystalline layer.
Claims7
A semiconductor member consisting essentially of a silicon support member, an insulator of a silicon oxide and an epitaxially grown non-porous silicon monocrystalline semiconductor region arranged on said insulator and having an area of 182 cm.sup.2 to 500 cm.sup.2, wherein within the area a dislocation defect density in said non-porous silicon monocrystalline semiconductor region is 2.0.times.10.sup.4 /cm.sup.2 or less, and the lifetime of carriers in said non-porous silicon monocrystalline semiconductor region is 5.0.times.10.sup.-4 sec or longer, and also the difference between the maximum thickness and the minimum thickness of said silicon monocrystalline semiconductor region is 10% or less based on said maximum thickness.
A semiconductor member consisting essentially of a silicon support member, an insulator of a silicon oxide and an epitaxially grown non-porous silicon monocrystalline semiconductor region having a 3-inch diameter arranged on said insulator, wherein a dislocation defect density in said non-porous silicon monocrystalline semiconductor region is 2.0.times.10.sup.4 /cm.sup.2 or less, and the lifetime of carriers in said non-porous silicon monocrystalline semiconductor region is 5.0.times.10.sup.-4 sec or longer, and also the difference between the maximum thickness and the minimum thickness of said silicon monocrystalline semiconductor region is 5% or less based on said maximum thickness.
A semiconductor member consisting essentially of a silicon support member, an insulator of a silicon oxide and an epitaxially grown non-porous silicon monocrystalline semiconductor region having a 4-inch diameter arranged on said insulator, wherein a dislocation defect density in said non-porous silicon monocrystalline semiconductor region is 2.0.times.10.sup.4 /cm.sup.2 or less, and the lifetime of carriers in said non-porous silicon monocrystalline semiconductor region is 5.0.times.10.sup.-4 sec or longer, and also the difference between the maximum thickness and the minimum thickness of said silicon monocrystalline semiconductor region is 8% or less based on said maximum thickness.
A semiconductor member consisting essentially of a silicon support member, an insulator of a silicon oxide and an epitaxially grown non-porous silicon monocrystalline semiconductor region having a 5-inch diameter arranged on said insulator, wherein a dislocation defect density in said non-porous silicon monocrystalline semiconductor region is 2.0.times.10.sup.4 /cm.sup.2 or less, and the lifetime of carriers in said non-porous silicon monocrystalline semiconductor region is 5.0.times.10.sup.-4 sec or longer, and also the difference between the maximum thickness and the minimum thickness of said silicon monocrystalline semiconductor region is 8% or less based on said maximum thickness.
Dependencies are inferred from the claim text.