US 6,150,029 AGranted

Method of forming a film having enhanced reflow characteristics at low thermal budget

AssigneeMicron Technology, Inc.

InventorsGurtej Sandhu, Randhir P. S. Thakur

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Abstract

A method of forming a film having enhanced reflow characteristics at low thermal budget is disclosed, in which a surface layer of material is formed above a base layer of material, the surface layer having a lower melting point than the base layer. In this way, a composite film having two layers is created. After reflow, the surface layer can be removed using conventional methods.

Claims2

Dependent claims

A film comprising a base layer of material formed on a substrate and a surface layer of material lying above the base layer of material, the surface layer having a lower melting point than the base layer, wherein the base layer comprises a material selected from the group consisting of GeBPSG, BPSG, BSG, and PSG, and wherein the surface layer comprises a material selected from the group consisting of GeBPSG having a germanium concentration higher than that of the base layer, BPSG having a boron concentration higher than that of the base layer, BSG having a boron concentration higher than that of the base layer, BPSG having a phosphorous concentration higher than that of the base layer, PSG having a phosphorous concentration higher than that of the base layer, and a layer including carbon.

Dependencies are inferred from the claim text.

Facts

Application: 08/937,331Filed 5 Sep 1997 · division
Priority: 7 Aug 1995
Granted: 21 Nov 2000
Term ends: Not estimatedThe source records don’t support an estimate.

Classification11 codes

H10P 14/6922
Containing silicon: the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
H10P 14/6518
Of treatments performed after formation of the materials: by introduction of substances into an already-existing insulating layer
H10P 14/662
Characterised by the type of materials: laminate layers, e.g. stacks of alternating high-k metal oxides
H10P 14/69215
Containing silicon: the material being a silicon oxide, e.g. SiO2

Family

Serial512,234Parent of this division · filed 7 Aug 1995
US 6,040,020 AParent of this division
US 6,150,029 AThis patent

From the US filing history. Foreign family members aren’t listed.

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Abstract

Facts

Application

08/937,331Filed 5 Sep 1997 · division

Priority

7 Aug 1995

Granted

21 Nov 2000

Term ends

Not estimatedThe source records don’t support an estimate.

Classification11 codes

H10P 14/6922
Containing silicon: the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
H10P 14/6518
Of treatments performed after formation of the materials: by introduction of substances into an already-existing insulating layer
H10P 14/662
Characterised by the type of materials: laminate layers, e.g. stacks of alternating high-k metal oxides
H10P 14/69215
Containing silicon: the material being a silicon oxide, e.g. SiO2