Integrated circuit insulator
AssigneeTexas Instruments Incorporated
InventorMona Eissa
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Abstract
Intermetal level dielectrics comprise fluorinated polydimethylenenaphthalene derived from the following monomers wherein each of R.sub.1, R.sub.2, R.sub.3, and R.sub.4 is selected from the group consisting of H, F, and fluorocarbon groups ##STR1## The dielectric and oxides may be between metal lines. Fluorination of the polydimethylenenaphthalene lowers dielectric constant and increases working temperature.
Claims5
An integrated circuit insulation material, comprising:
- (a) a polymer derived from the monomers:
- ##STR12## (b) wherein each of R.sub.1, R.sub.2, R.sub.3, and R.sub.4 is selected from the group consisting of H, F, and fluorocarbon groups.
A precursor for vapor deposition polymerization, comprising:
- ##STR13## wherein each of R.sub.1, R.sub.2, R.sub.3, R.sub.4, R.sub.5, R.sub.6, R.sub.7, and R.sub.8 is selected from the group consisting of H, F, and fluorocarbon groups.
An integrated circuit with first and second conductor levels and an interlevel insulation layer, comprising:
- (a) a first region of a silicon oxide, and
- (b) a second region of a fluoropolymer derived from the monomers ##STR14## wherein each of R.sub.1, R.sub.2, R.sub.3, and R.sub.4 is selected from the group consisting of H, F, and fluorocarbon groups.
Dependencies are inferred from the claim text.