Method for depositing low dielectric constant oxide films
AssigneeApplied Materials, Inc.
InventorsDung-Ching Perng, Peter Wai-Man Lee, Thomas E. Deacon
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Abstract
A composite silicon dioxide layer with a reduced dielectric constant is formed by enhancing the surface sensitivity of a PECVD liner layer with activated oxygen. Pores form in an SACVD layer of silicon dioxide deposited from a TEOS precursor over the sensitized PECVD layer. The pores reduce the dielectric constant of the composite layer. Activated oxygen is provided to the PECVD layer in the form of ozone or an oxygen-based plasma.
Claims14
A method for reducing a dielectric constant of a film of silicon oxide on a substrate, the method comprising:
- (a) forming a first layer of silicon oxide on the substrate in a chamber using a plasma-enhanced chemical vapor deposition process;
- (b) thereafter, enhancing a surface sensitivity of a surface of the first layer by exposing the surface to activated oxygen to form a sensitized surface;
- and
- (c) thereafter, forming a second layer of porous silicon oxide on the sensitized surface from a hydrophobic silicon source using a subatmospheric chemical vapor deposition process.
A method of forming a multilayer silicon oxide dielectric film over a substrate, said method comprising:
- (a) forming a first layer of silicon oxide over the substrate using a plasma CVD process;
- (b) thereafter, exposing a surface of the first silicon oxide layer to activated oxygen;
- and
- (c) thereafter, forming a second layer of silicon oxide on the first layer using a thermal CVD process.
Dependencies are inferred from the claim text.