Method of manufacturing fluorine-containing silicon oxide films for semiconductor device
AssigneeASM Japan K.K.
InventorsNobuo Matsuki, Johannes Bart Cornelis Van Der Hilst
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Abstract
The fluorine type silicon oxide film is formed using plasma CVD apparatus on a semiconductor wafer using a gas which is a mixture of a silicon source gas, a silicon type fluorine source gas, an oxidizing agent and an inert gas. The oxide film is formed using the inert gas at a flow which is at least five times the total flow rate of the silicon source gas and the silicon type fluorine source gas. Tetraethylorthosilicate (TEOS) is used as the silicon source gas; fluorotriethoxysilane (TEFS) is used as the silicon type fluorine source gas; oxygen (O.sub.2) is used as the oxidizing agent; and a helium (He) or argon (Ar) gas is used as the inert gas.
Claims5
A method of forming a fluorinated silicon oxide film on a substrate, comprising the steps of:
- providing as a material gas, a silicon source gas, a fluorinated silicon source gas, an oxidizing agent, and an inert gas, into a reaction chamber to flow onto a surface of the substrate placed inside the chamber, said inert gas flowing into the chamber at a flow rate at least five times that of the sum of the silicon source gas and the fluorinated silicon source gas to stabilize fluorine-silicon bonding when a fluorinated silicon oxide film is formed;
- and
- conducting chemical vapor deposition using the foregoing gases to form a fluorinated silicon oxide film on the surface of the substrate.
Dependencies are inferred from the claim text.