Composition and method for reducing dishing in patterned metal during CMP process
AssigneesSiemens Aktiengesellschaft, International Business Machines Corporation
InventorsChienting Lin, Juin-Fang Wang, Fen Fen Jamin, Ravikumar Ramachandran
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Abstract
A composition for reducing dishing in patterned large metal surfaces embedded in a dielectric as a workpiece during chemical mechanical polishing, comprising: a viscosity increasing amount of viscosity enhancer in replacement of a portion of deionized water in a slurry containing an abrasive.
Claims6
A composition for reducing dishing in patterned large metal surfaces embedded along with small metal surfaces in a dielectric as a workpiece during chemical mechanical polishing, consisting essentially of:
- a viscosity increasing amount of a viscosity enhancer that is a non-reactive, polyhydric alcohol selected from glycerol or polyethylene glycol, in replacement of a portion of deionized water in a slurry containing an abrasive;
- wherein said viscosity enhancer is present in amounts up to 50 volume percent of deionized water, and said composition is characterized by a viscosity from between 3.4 to 12 cps.
A method for reducing dishing in patterned large metal surfaces embedded along with small metal surfaces in a dielectric as a workpiece during chemical mechanical polishing, comprising:
- exposing the surface of said workpiece to a polishing composition comprising a viscosity increasing amount of a viscosity enhancer that is a non-reactive polyhydric alcohol selected from glycerol or polyethylene glycol, in replacement of a portion of deionized water in a slurry containing an abrasive, wherein said viscosity enhancer is present in amounts up to 50 volume percent of deionized water;
- said slurry having a viscosity of between 3.4 to 12 cps.
Dependencies are inferred from the claim text.