Method of producing smooth titanium nitride films having low resistivity
AssigneeApplied Materials, Inc.
InventorsKenny King-tai Ngan, Seshadri Ramaswami
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Abstract
An ion deposition sputtering process for producing a titanium nitride film having a resistivity less than about 70 .mu..OMEGA.-cm is disclosed, which comprises the steps of: (1) adjusting a percentage of ionization of a gas phase mixture to a predetermined range by adjusting the power to an ionization source; and (2) adjusting a deposition rate of said film on a substrate to a predetermined range so that a combination of said percentage of ionization of said deposition mixture and said deposition rate produces said film.
Claims6
A method of consistently producing a titanium nitride film having a resistivity less than about 70 .mu..OMEGA.-cm by an ion deposition sputtering process, said method comprising the steps of:
- a) adjusting a percentage of ionization of a gas phase deposition mixture from which said film is produced to fall within a predetermined range by adjusting the power to an ionization source;
- and
- b) adjusting a deposition rate of said film on a substrate to fall within a predetermined range, so that a combination of said percentage of ionization of said deposition mixture and said deposition rate produces said film.
Dependencies are inferred from the claim text.