Plasma processing apparatus
AssigneesTokyo Electron Yamanashi Limited, Japan Science and Technology Corporation
InventorKiichi Hama
Life of this patent
Estimating the term…
Abstract
An inductively coupled type dry etching apparatus has a spiral RF antenna disposed on the ceiling wall of a process chamber. A susceptor is arranged in the process chamber, for mounting a semiconductor wafer thereon. The ceiling wall has upper and lower layers with a dielectric matrix, and a conductive Faraday shield layer sandwiched therebetween. The Faraday shield layer has a plurality of slits radially arranged. The matrix of the upper and lower layers and the Faraday shield layer are set to have coefficients of thermal expansion close to each other, and/or the Faraday shield layer is set to have a very small thickness.
Claims14
An apparatus for subjecting a target object to a plasma process by using a plasma, comprising:
- an airtight process chamber formed in a process vessel;
- a support member arranged in said process chamber, for supporting said target object in said process chamber;
- a gas supply system for supplying a process gas into said process chamber;
- an exhaust system for exhausting and setting said process chamber at a vacuum;
- an RF antenna for generating an RF electric field for exciting said process gas in said process chamber to convert said process gas into a plasma, said electric field having an electric field direction which is defined essentially by lines of electric force extending substantially parallel to said target object supported by said support member;
- a power supply for supplying an RF power to said RF antenna;
- and
- an interposed wall which has an exposed inner surface exposed to said process chamber and is interposed between said process chamber and said RF antenna, said interposed wall having a dielectric matrix layer and a conductive Faraday shield layer arranged in said matrix layer to extend on a plane substantially parallel to said electric field direction, said Faraday shield layer being electrically grounded and having a thickness of about 10 to 100 .mu.m, wherein, where coefficients of thermal expansion of said matrix layer and said Faraday shield layer are CT1 and CT2, respectively, 0.7 .ltoreq.(CT1/CT2).ltoreq.1.7 is satisfied, said Faraday shield layer being formed by vapor deposition.
An apparatus for subjecting a target object to a plasma process by using a plasma, comprising:
- an airtight process chamber formed in a process vessel;
- a support member arranged in said process chamber, for supporting said target object in said process chamber;
- a gas supply system for supplying a process gas into said process chamber;
- an exhaust system for exhausting and setting said process chamber at a vacuum;
- an RF antenna for generating an RF electric field for exciting said process gas in said process chamber to convert said process gas into a plasma, said electric field having an electric field direction which is defined essentially by lines of electric force extending substantially parallel to said target object supported by said support member;
- a power supply for supplying an RF power to said RF antenna;
- and
- an interposed wall which has an exposed inner surface exposed to said process chamber and is interposed between said process chamber and said RF antenna, said interposed wall having a dielectric matrix layer and a conductive Faraday shield layer arranged in said matrix layer to extend on a plane substantially parallel to said electric field direction, said Faraday shield layer being electrically grounded, wherein said Faraday shield layer is a layer formed by subjecting said matrix layer to doping.
Dependencies are inferred from the claim text.