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US 6,148,764 AGranted
Multiple micro inlet silane injection system for the jet vapor deposition of silicon nitride with a microwave discharge jet source
AssigneeJet Process Corporation
InventorsGuang-Ji Cui, Takashi Tamagawa, Bret Halpern
Life of this patent
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Abstract
Introducing a silane reactant gas into a Jet Vapor Deposition microwave discharge source for deposition of silicon nitride films at increased rate. An array of regularly spaced micro-inlets in a JVD microwave discharge source delivers the silane reactant gas and act as non-interfering silane injectors to give a rate increase proportional to the number of micro-inlets while preserving deposited film quality.
Claims19
A gas jet system for vapor deposition of a material film upon a substrate, said system comprising:
- a deposition chamber having a port for allowing access to a deposition chamber interior;
- a pump means for producing a predetermined pressure within said deposition chamber interior;
- a translation means positioned within said deposition chamber interior for receiving said substrate and for moving said substrate relative to said deposition chamber interior;
- a gas jet apparatus having an opening for providing said deposition chamber with a plurality of material jets, said gas jet apparatus including:
- a first nozzle means for passing therethrough a pressurized flow of molecular species, said first nozzle means being in communication with said deposition chamber;
- a discharge means configured about said first nozzle means for generating an excited discharge of said pressurized flow of molecular species;
- a second nozzle means formed with said first nozzle means and in communication with said deposition chamber, said second nozzle means defining said opening;
- a reactant gas inlet means supplied with a pressurized flow of reactant gas for introducing a plurality of reactant gas jets into contact with said excited molecular species flow;
- and
- wherein said reactant gas jets and said excited discharge combine to form said material jets, said material jets exiting said gas jet apparatus at supersonic speeds through said opening to impinge upon said substrate and form said material film.
7 more elements
A gas jet system for vapor deposition of a material film upon a substrate, said system comprising:
- a deposition chamber having a port for allowing access to a deposition chamber interior;
- a pump means for producing a predetermined pressure within said deposition chamber interior;
- a translation means positioned within said deposition chamber interior for receiving said substrate and for moving said substrate relative to said deposition chamber interior;
- a gas jet apparatus having an opening for providing said deposition chamber with a plurality of material jets, said gas jet apparatus including:
- a first nozzle means for passing therethrough a pressurized flow of molecular species and defining said opening, said first nozzle means defining a first nozzle portion in communication with said deposition chamber, said first nozzle portion having a plurality of spaced apertures;
- a discharge means configured about said first nozzle means for generating an excited discharge of said pressurized flow of molecular species;
- a second nozzle means formed coaxial with said first portion and in communication with said deposition chamber;
- a reactant gas inlet means supplied with a pressurized flow of reactant gas for introducing a plurality of reactant gas jets into contact with said excited discharge;
- and
- wherein said reactant gas passes through said spaced apertures to create said reactant gas jets, said reactant gas jets combining with said excited discharge and exiting said gas jet apparatus at supersonic speeds through said opening to form said material film upon said substrate.
7 more elements
Dependencies are inferred from the claim text.