Thin film multilayered electrode of high frequency electromagnetic field coupling

A high frequency transmission line comprising:

• a first transmission line;
• and
• at least one microwave second transmission line in which at least a pair of thin film conductor layers and at least one thin film dielectric layer are alternately stacked to provide said microwave second transmission line comprising said at least a pair of said thin film conductor layers between which said at least one thin film dielectric layer is sandwiched,
• wherein, a respective film thickness of each of said thin film conductors is set so as to be smaller than a skin depth at a predetermined frequency;
• wherein, based on the number (n) of layers of said thin film conductor layers and said thin film dielectric layers, the respective film thickness of each of said thin film dielectric layers is set so that, at the predetermined frequency, a respective phase velocity of a microwave which propagates through said first transmission line and a phase velocity of a microwave which propagates through at least one of said second transmission lines are substantially equal to each other, and
• wherein, based on the number (n) of layers of said thin film conductor layers and said thin film dielectric layers, the respective film thickness of each of said thin film conductor layers is set so that an electromagnetic field of said first transmission line and an electromagnetic field of at least one of said second transmission lines are coupled with each other and currents flowing in respective ones of said thin film conductors are substantially equal to each other.

A high frequency transmission line having at least one conductor,

• said conductor comprising a thin film multi-layered electrode having a plurality of layers of thin film conductors and a plurality of layers of thin film dielectrics alternately stacked to provide a plurality of microwave transmission lines, each of said microwave transmission lines comprising a respective pair of said thin film conductors between which corresponding ones of said thin film dielectrics are sandwiched,
• wherein, a respective film thickness of each of said thin film conductors is set so as to be smaller than a skin depth at a predetermined frequency,
• wherein, based on a number (n) of layers of said thin film conductors and said thin film dielectrics, the respective film thickness of each of said thin film dielectrics is set so that, at the predetermined frequency, respective phase velocities of microwaves which propagate through at least two of said plurality of microwave transmission lines are substantially equal to each other, and
• wherein, based on the number (n) of pairs of said thin film conductors and said thin film dielectrics, the respective film thickness of each of said thin film conductors is set so that electromagnetic fields of at least two of said plurality of microwave transmission lines are coupled with each other and currents flowing in respective ones of said thin film conductors are substantially equal to each other.

A high frequency device having an electrode perform a predetermined high frequency operation,

• wherein said electrode comprises a high frequency electromagnetic field coupled type thin film multilayered electrode in which a plurality of layers of thin film conductors and a plurality of layers of thin film dielectrics are alternatively stacked to provide a plurality of microwave transmission lines, said microwave transmission lines each comprising a respective pair of said thin film conductors between which corresponding ones of said thin film dielectrics are sandwiched,
• wherein a respective film thickness of each of said thin film conductors is set so as to be smaller than a skin depth at a predetermined frequency,
• wherein, based on (a) a number (n) of layers of said thin film conductors and said thin film dielectrics, and (b) the skin depth of the predetermined frequency, a respective film thickness of each of said thin film dielectrics is set so that respective phase velocities of microwaves which propagate through at least two of said plurality of microwave transmission lines are substantially equal to each other, and
• wherein, based on (a) the number (n) of layers of said thin film conductors and said thin film dielectrics, and (b) the skin depth of the predetermined frequency, respective film thickness of each of said thin film conductors is set so that electromagnetic fields of at least two of said plurality of microwave transmission lines are coupled with each other, and currents flowing in respective ones of said thin film conductors are substantially equal to each other.