Integrated semiconductor lasers and photodetectors
AssigneeThe Regents of the University of California
InventorsEric R. Hegblom, Duane A. Louderback
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AssigneeThe Regents of the University of California
InventorsEric R. Hegblom, Duane A. Louderback
Estimating the term…
A method for fabricating vertical cavity lasers and photodetectors on the same substrate from a single epitaxial layer to form integrated laser/photodetector structures. A DBR/cavity/DBR photodetector structure is formed on the substrate with the DBR on the input side of the photodetector being fabricated from relatively low index contrast, high refractive index semiconducting layers. Some of those same DBR layers on the input side of the photodetector are then converted from a low index contrast, high refractive index semiconducting material to a low refractive index material by, for example, etching the DBR/cavity/DBR structure down to the substrate layer and using lateral oxidation or etching, to form relatively high index contrast, high reflectivity mirrors for the laser.
A method for fabricating a vertical cavity laser adjacent to a vertical cavity photodetector, comprising the steps of:
A method for fabricating a vertical cavity laser adjacent to a vertical cavity photodetector, comprising the steps of:
A method for fabricating a vertical cavity laser adjacent to a vertical cavity photodetector, comprising the steps of:
A method for fabricating a vertical cavity laser adjacent to a vertical cavity photodetector, comprising the steps of:
Dependencies are inferred from the claim text.