On-chip word line voltage generation for DRAM embedded in logic process

A memory system that operates in response to a positive supply voltage and a ground supply voltage, the memory system comprising:

• a dynamic random access memory (DRAM) cell;
• a word line coupled to the DRAM cell, wherein the word line is activated to access the DRAM cell;
• a word line driver coupled to the word line;
• and
• a negative boosted voltage generator for providing a negative boosted voltage less than the ground supply voltage and greater than the ground supply voltage minus the absolute value of one transistor threshold voltage, wherein the negative boosted voltage generator is coupled to the word line driver.

A memory system that operates in response to a positive supply voltage and a ground supply voltage, the memory system comprising:

• a dynamic random access memory (DRAM) cell;
• a word line coupled to the DRAM cell, wherein the word line is activated to access the DRAM cell;
• a positive boosted voltage generator for providing a positive boosted voltage greater than the positive supply voltage;
• a negative boosted voltage generator for providing a negative boosted voltage less than the ground supply voltage;
• a word line driver having a p-channel transistor coupled between the word line and the positive boosted voltage generator, and an n-channel transistor coupled to the word line;
• and
• a coupling circuit coupled between the n-channel transistor and the negative boosted voltage generator, the coupling circuit being configured to couple the negative boosted voltage generator to the n-channel transistor when the word line is activated, and the coupling circuit being configured to provide the ground supply voltage to the n-channel transistor when the word line is not activated.

A memory system that operates in response to a positive supply voltage and a ground supply voltage, the memory system comprising:

• a dynamic random access memory (DRAM) cell;
• a word line coupled to the DRAM cell, wherein the word line is activated to access the DRAM cell;
• a negative boosted voltage generator for providing a negative boosted voltage less than the ground supply voltage;
• a word line driver coupled to the word line;
• and
• a coupling circuit coupled between the word line driver and the negative boosted voltage generator, the coupling circuit being configured to provide the ground supply voltage to the word line driver when the word line is first activated, the coupling circuit further being configured to provide the negative boosted voltage to the word line driver when the voltage on the word line falls below the positive supply voltage.

A memory system that operates in response to a positive supply voltage and a ground supply voltage, the memory system comprising:

• a dynamic random access memory (DRAM) cell;
• a word line coupled to the DRAM cell, wherein the word line is activated to access the DRAM cell;
• a positive boosted voltage generator for providing a positive boosted voltage greater than the positive supply voltage;
• a negative boosted voltage generator for providing a negative boosted voltage less than the ground supply voltage;
• a word line driver having a p-channel transistor coupled to the word line, and an n-channel transistor coupled between the word line and the negative boosted voltage generator;
• and
• a coupling circuit coupled between the p-channel transistor and the positive boosted voltage generator, the coupling circuit being configured to couple the positive boosted voltage generator to the p-channel transistor when the word line is activated, and the coupling circuit being configured to provide the positive supply voltage to the p-channel transistor when the word line is not activated.

A memory system that operates in response to a positive supply voltage and a ground supply voltage, the memory system comprising:

• a dynamic random access memory (DRAM) cell;
• a word line coupled to the DRAM cell, wherein the word line is activated to access the DRAM cell;
• a positive boosted voltage generator for providing a positive boosted voltage greater than the positive supply voltage;
• a word line driver coupled to the word line;
• and
• a coupling circuit coupled between the word line driver and the positive boosted voltage generator, the coupling circuit being configured to provide the positive supply voltage to the word line driver when the word line is first activated, the coupling circuit further being configured to provide the positive boosted voltage to the word line driver when the voltage on the word line rises above the ground supply voltage.