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US 6,147,905 AGranted
Non-volatile semiconductor memory device
AssigneeFujitsu Limited
InventorJunji Seino
Life of this patent
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Abstract
A non-volatile semiconductor memory device includes memory cell blocks in which n sectors for erasing are defined where n is an integer equal to or greater than 1. Each of the memory cell blocks includes sense amplifiers, and an activation signal generating circuit activating an activation signal for generating the sense amplifiers. Data held in the sense amplifiers of the memory cell blocks are continuously output in accordance with a burst length. Sectors related to blocks corresponding to the burst length are sequentially subjected to an erase operation.
Claims9
A non-volatile semiconductor memory device comprising:
- memory cell blocks in which n sectors for erasing are defined where n is an integer equal to or greater than 1,
- each of the memory cell blocks comprising:
- sense amplifiers;
- and
- an activation signal generating circuit generating an activation signal for activating the sense amplifiers,
- data held in the sense amplifiers of the memory cell blocks being continuously output in accordance with a burst length,
- sectors related to blocks corresponding to the burst length being sequentially subjected to an erase operation.
4 more elements
Dependencies are inferred from the claim text.