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US 6,147,843 AGranted
Magnetoresistive effect element having magnetoresistive layer and underlying metal layer
AssigneeNEC Corporation
InventorsHidefumi Yamamoto, Kazuhiko Hayashi, Masafumi Nakada, Jun-Ichi Fujikata, Kunihiko Ishihara
Life of this patent
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Abstract
In a magnetoresistive element, an underlying metal layer is formed on a substrate, and a magnetoresistive layer is formed on the underlying metal layer. The underlying metal layer has a thickness of about 0.1 to 3.0 nm.
Claims13
A magnetoresistive element comprising:
- an non-magnetic substrate;
- an underlying metal layer formed with direct contact on said substrate, said underlying metal layer having a thickness in a range of approximately 0.1 to 3.0 nm, and being made of one of Al, Pt, Be, Cr, W and Y;
- and
- a magnetoresistive layer formed directly on said underlying metal layer, said magnetoresistive layer having an improved crystalline orientation as compared to a magnetoresistive layer of the same material if formed without said underlying metal layer directly on said substrate.
1 more element
Dependencies are inferred from the claim text.