Radio-frequency variable attenuator
AssigneeMitel Semiconductor Limited
InventorViatcheslav Igor Souetinov
Life of this patent
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Abstract
A variable attenuator comprises bipolar transistors Q1 and Q2 connected in reverse parallel between a point 1 and ground potential G. The base electrodes of the transistors Q1 and Q2 are biased independently by a control circuit 3. The collector of transistor Q1 and the emitter of transistor Q2 are commonly connected to a bias voltage provided by resistor R2 and voltage source Vr. The attenuator provides means by which the linearity, gain, power handling capabilities and noise figure of a front-end receiver can be altered. The attenuator is susceptible to integration in, for example, a radio receiver front-end.
Claims7
A radio-frequency variable attenuator comprising first and second bipolar transistors having their emitter/collector paths connected in reverse parallel between a point on a signal path and ground potential, with circuitry to apply a bias voltage to said point on the signal path and circuitry individually to bias the base electrodes of said first and second transistors independently of each other.
A radio-frequency variable attenuator comprising first and second bipolar transistors each having emitter, base and collector electrodes, the collector electrode of the first transistor and the emitter electrode of the second transistor being connected together and to a point in a radio-frequency signal path, the emitter electrode of the first transistor and the collector electrode of the second transistor being connected together and to a radio-frequency signal return path, circuitry to apply a bias voltage to said point in the radio-frequency signal path and circuitry individually to bias the base electrodes of said first and second transistors independently of each other.
Dependencies are inferred from the claim text.