Solid-state image sensor
AssigneeNEC Corporation
InventorTakashi Nakano
Life of this patent
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Abstract
The present invention provides a solid-state image sensor comprising a source follower amplifier on a single chip capable of preventing a gain loss caused by a back gate effect. In the solid-state image sensor including multi-stage single-chip source follower amplifier, one stage of the multi-stage source follower amplifier has a load transistor 5 whose source and gate are connected to an output signal 3 via a capacitor 7, and a DC voltage 6 is applied via a resistor 8 having a high resistance.
Claims23
A solid-state image sensor comprising a multi-stage source follower amplifier, each stage having at least one load transistor and one driver transistor, on a single chip,
- wherein a DC voltage is applied to a source or gate of said load transistor of the source follower amplifier of the last stage and at least one source follower amplifier of a stage prior to the last stage in said multi-stage source follower amplifier, or to a source or a source and gate of said load transistor of at least one source follower amplifier of the stage prior to the last stage in said multi-stage source follower amplifier, and
- an output signal from said multi-stage source follower amplifier is applied via a capacitor.
A solid-state image sensor comprising a multi-stage source follower amplifier, each stage having at least one load transistor and at least one driver transistor, on a single chip,
- wherein a source follower amplifier of at least one stage has a load transistor whose source and gate are connected via a capacitor to an output terminal of said multi-stage source follower amplifier, and
- at least one of remaining source follower amplifiers has a load transistor whose source is connected via said capacitor to said output terminal, so that a DC voltage is applied to a gate of said load transistor.
A solid-state image sensor comprising a multi-stage source follower amplifier, each stage having at least one load transistor and one driver transistor, on a single chip,
- wherein an output signal from said multi-stage source follower amplifier is applied via a buffer amplifier and a capacitor to a source or a source and gate of said load transistor in said multi-stage source follower amplifier.
A solid-state image sensor including a multi-stage source follower amplifier, each stage having at least one load transistor and at least one driver transistor, on a single chip,
- wherein a source follower amplifier of at least one stage has a load transistor whose source and gate are connected via a buffer amplifier and a capacitor to an output terminal of said multi-stage source follower amplifier, and
- at least one of remaining source follower amplifiers has a load transistor whose source is connected via said buffer amplifier to said output terminal, so that a DC voltage is applied to a gate of said load transistor.
A solid-state image sensor comprising multi-stage source follower amplifier, each stage having at least one load transistor and one driver transistor, on a single chip,
- wherein a DC voltage is applied to a source or a source and gate of at least one source follower in said multi-stage source follower amplifier, and
- an output signal from said multi-stage source follower amplifier is applied via a capacitor and a buffer amplifier.
A solid-state image sensor including a multi-stage source follower amplifier, each state having at least one load transistor and at least one driver transistor, on a single chip,
- wherein a source follower amplifier of at least one stage has a load transistor whose source and gate are connected via a capacitor and buffer amplifier to an output terminal of said multi-stage source follower amplifier, and
- at least one of remaining source follower amplifiers has a load transistor whose source is connected via said capacitor and a buffer amplifier to said output terminal, so that a DC voltage is applied to a gate of said load transistor.
A solid-state image sensor comprising a multi-stage source follower amplifier, each stage having at least one load transistor and one driver transistor, on a single chip,
- wherein a DC voltage is applied to a source or a source and gate of at least one source follower in said multi-stage source follower amplifier, and
- an output signal from said multi-stage source follower amplifier is applied via a capacitor,
- wherein said DC voltage is applied via a resistor having high resistance.
A solid-state image sensor comprising a multi-stage source follower amplifier, each stage having at least one load transistor and one driver transistor, on a single chip,
- wherein a DC voltage is applied to a source or a source and gate of at least one source follower in said multi-stage source follower amplifier, and
- an output signal from said multi-stage source follower amplifier is applied via a capacitor,
- wherein said capacitor is provided out of said chip.
Dependencies are inferred from the claim text.