Electron-emitting device, with coating film made of heat-resistant material and electron source and image-forming apparatus using the device and manufacture method thereof

An electron-emitting device comprising:

• a pair of electrodes;
• an electroconductive film arranged between said electrodes, said electroconductive film having an electron emitting region including a fissure;
• and
• a coating film arranged in said fissure and connected to said electroconductive film to form within said fissure a gap narrower than said fissure, said coating film being made primarily of a material which develops a vapor pressure of 1.3.times.10.sup.-3 Pa, at a higher temperature than the material of said electroconductive film, wherein said material is a metal or a metal oxide.

An electron-emitting device comprising:

• a pair of electroconductive films disposed opposite to each other with a first space;
• a film disposed within said first space and connected to at least one of said pair of electroconductive films so that a second space narrower that said first space is formed within said first space, said film including as primary component a material having a melting point higher than the melting point of said electroconductive film;
• and
• a pair of electrodes connected to respective films of said pair of electroconductive films,
• wherein said material having said higher melting point is metal or metal oxide.

An electron-emitting device comprising:

• a pair of electroconductive films disposed opposite to each other with a first space;
• a film disposed within said first space and on one of said electroconductive films and connected to at least one of said pair of electroconductive films so that a second space narrower than said first space is formed within said first space, said film including as primary component a material having a melting point higher than the melting point of said electroconductive film;
• and
• a pair of electrodes connected to respective films of said pair of electroconductive films,
• wherein said material having said higher melting point is metal or metal oxide.

An electron-emitting device comprising:

• a pair of electroconductive films disposed opposite to each other with a first space;
• a film disposed within said first space and connected to each of said pair of electroconductive films so that a second space narrower than said first space is formed within said first space, said film including as primary component a material having a melting point higher than the melting point of said electroconductive film;
• and
• a pair of electrodes connected to respective films of said pair of electroconductive films,
• wherein said material having said higher melting point is metal or metal oxide.

An electron-emitting device comprising:

• a pair of electroconductive films disposed opposite to each other with a first space;
• a film disposed within said first space and on said pair of electroconductive films and connected to each of said pair of electroconductive films so that a second space narrower than said first space is formed within said first space, said film including as primary component a material having a melting point higher than the melting point of said electroconductive film;
• and
• a pair of electrodes connected to respective films of said pair of electroconductive films,
• wherein said material having said higher melting point is metal or metal oxide.

An electron-emitting device comprising:

• a pair of electroconductive films disposed opposite to each other with a first space;
• a film disposed within said first space and connects to at least one of said pair of electroconductive films so that a second space narrower than said first space if formed within said first space, said film including as primary component a first material providing a vapor pressure of 1.3.times.10.sup.-3 Pa at higher temperature than a second material of said electroconductive films;
• and
• a pair of electrodes connected to respective films of said pair of electroconductive films,
• wherein said first material is metal or metal oxide.

An electron-emitting device comprising:

• a pair of electroconductive films disposed opposite to each other with a first space;
• a film disposed within said first space and on one said electroconductive films and connected to at least one of said pair of electroconductive films and connected to at least one of said pair of electroconductive films so that a second space narrower than said first space is formed within said first space, said-film including as primary component a second material providing a vapor pressure of 1.3.times.10.sup.-3 Pa at higher temperature than a first material of said electroconductive films;
• and
• a pair of electrodes connected to respective films of said pair of electroconductive films,
• wherein said first material is metal or metal oxide.

An electron-emitting device comprising:

• a pair of electroconductive films disposed opposite to each other with a first space;
• a film disposed within said first space and connected to each of said pair of electroconductive films so that a second space narrower than said first space is formed within said first space, said film including as primary component a first material providing a vapor pressure of 1.3.times.10.sup.-3 Pa at higher temperature than a second material of said electroconductive films;
• and
• a pair of electrodes connected to respective films of said pair of electroconductive films,
• wherein said first material is metal or metal oxide.

An electron-emitting device comprising:

• a pair of electroconductive films disposed opposite to each other with a first space;
• a film disposed within said first space and on said pair of electroconductive films and connected to each of said pair of electroconductive films so that a second space narrower than said first space is formed within said first space, said film including as primary component a first material providing a vapor pressure of 1.3.times.10.sup.-3 Pa at higher temperature than a second material of said electroconductive films;
• and
• a pair of electrodes connected to respective films of said pair of electroconductive films,
• wherein said first material is metal or metal oxide.