Electron emission device and display device using the same
AssigneePioneer Electronic Corporation
InventorsTakamasa Yoshikawa, Takashi Chuman, Nobuyasu Negishi, Shingo Iwasaki, Kiyohide Ogasawara, Hiroshi Ito
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Abstract
An electron emission device exhibits a high electron emission efficiency. The device includes an electron supply layer of metal or semiconductor, an insulator layer formed on the electron supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer contains chemical elements constituting the electron supply layer and has a film thickness of 50 nm or greater. When an electric field is applied between the electron supply layer and the thin-film metal electrode, the electron emission device emits electrons.
Claims3
An electron emission device comprising:
- an electron supply layer made of metal or semiconductor;
- an insulator layer formed on the electron supply layer;
- and
- a thin-film metal electrode formed on the insulator layer and facing a vacuum space,
- characterized in that said insulator layer containing chemical elements constituting said electron supply layer and formed at a film thickness of 50 nm or greater, whereby the electron emission device emits electrons when an electric field is applied between the electron supply layer and the thin-film metal.
An electron emission display device comprises:
- a pair of first and second substrates facing each other with a vacuum space in between;
- a plurality of electron emission devices provided on the first substrate;
- a collector electrode provided in the second substrate;
- and
- a fluorescent layer formed on the collector electrode,
- each of the electron emission devices comprising an electron supply layer of metal or semiconductor;
- an insulator layer formed on the electron supply layer;
- and a thin-film metal electrode formed on the insulator layer and facing a vacuum space, wherein said insulator layer containing chemical elements constituting said electron supply layer and formed at a film thickness of 50 nm or greater.
Dependencies are inferred from the claim text.