Electronic component and method of manufacture

A semiconductor component comprising:

• a semiconductor substrate;
• an electrically conductive layer supported by the semiconductor substrate;
• and
• an electrical interconnect having an electrical coupling portion coupled to and overlying the electrically conductive layer;
• wherein the electrical coupling portion of the electrical interconnect has a plIurality of protrusions coupled to the electrically conductive layer;
• and
• wherein each of the plurality of protrusions has a surface substantially coplanar to each other and substantially parallel with the electrically conductive layer in order to maximize a coupling surface area between the plurality of protrusions and the electrically conductive layer.

A semiconductor component comprising:

• a support substrate having an electrically conductive mounting region;
• a semiconductor substrate mounted over and electrically coupled to the electrically conductive mounting region, the semiconductor substrate having a surface facing away from the support substrate, and the support substrate larger than the semiconductor substrate;
• a transistor in the surface;
• a metal layer supported by the surface and divided into first and second bonding regions physically separated from each other and electrically coupled to the transistor;
• an electrical lead supported by the first bonding region and electrically coupled to the first bonding region, the electrical lead having a plurality of protrusions adjacent to the metal layer wherein each of the plurality of protrusions have a surface substantially parallel with the first bonding region;
• and
• an encapsulant surrounding the semiconductor substrate, the metal layer, and the plurality of protrusions of the electrical lead wherein the support substrate supports the encapsulant and wherein an end portion of the electrical lead extends out of the encapsulant.