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US 6,147,391 AGranted
Semiconductor hetero-interface photodetector
AssigneeThe Regents of the University of California
InventorsJohn E. Bowers, Aaron R. Hawkins
Life of this patent
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Abstract
A method of processing semiconductor films and layers, utilizing heterojunctions, to create a photodetector. Novel combinations of materials, such as silicon and indium gallium arsenide (InGaAs) are combined using wafer fusion techniques to create heterojunctions that cannot be created by any other growth methods. Devices responsive to different regions of the optical spectrum or that have higher efficiencies are created.
Claims31
A photodetector comprising:
- a first semiconductor layer including an absorption region, said absorption region being configured to receive optical signals and generate electrical signals in response thereto, said first semiconductor layer having a first lattice constant;
- and
- second semiconductor layer having a second lattice constant different than said first lattice constant and including a multiplication region, said first semiconductor layer contacting said second semiconductor layer, said multiplication region being configured to amplify said electrical signals generated by said absorption region, said first and second semiconductor layers further being configured so that a potential can be applied across said first and second semiconductor layers, said potential creating an electric field in said first and second semiconductor layers, said electric field having a magnitude greater in said multiplication region than in said absorption region,
- wherein said absorption region comprises a material selected from the group of:
- InAs, InSb, InP, In.sub.x Ga.sub.1-x As, InAs.sub.y P.sub.1-y, InP.sub.y As.sub.1-y, In.sub.x Ga.sub.1-x N, In.sub.x Ga.sub.1-x As.sub.y Sb.sub.1-y, In.sub.x Ga.sub.1-x As.sub.y P.sub.1-y, In.sub.x Ga.sub.y Al.sub.1-x-y As, Pb.sub.x Sn.sub.1-x Te, AlSb, AlAs, Al.sub.x Ga.sub.1-x N, ZnSe, ZnTe, BN, Ge, GaP, GaAs, GaSb, Ga.sub.x Al.sub.1-x As, GaAs.sub.y P.sub.1-y, Ga.sub.x In.sub.1-x P, Ga.sub.x In.sub.1-x sb, Hg.sub.x Cd.sub.1-x Te,
- wherein x and y are numbers satisfying:
- 0.ltoreq.x.ltoreq.1;
- and 0.ltoreq.y.ltoreq.1.
5 more elements
A photodetector comprising:
- a first semiconductor layer including an absorption region, said absorption region being configured to receive optical signals and generate electrical signals in response thereto, said first semiconductor layer having a first lattice constant;
- and
- second semiconductor layer having a second lattice constant different than said first lattice constant and including a multiplication region, said first semiconductor layer contacting said second semiconductor layer, said multiplication region being configured to amplify said electrical signals generated by said absorption region, said first and second semiconductor layers further being configured so that a potential can be applied across said first and second semiconductor layers, said potential creating an electric field in said first and second semiconductor layers, said electric field having a magnitude greater in said multiplication region than in said absorption region,
- wherein said multiplication region comprises a group IV element.
1 more element
A photodetector, comprising:
- a first semiconductor layer including an absorption region, said first semiconductor layer having a first lattice constant;
- and
- a second semiconductor layer having a second lattice constant different than said first lattice constant and including a multiplication region, said first semiconductor layer contacting said second semiconductor layer, said absorption region being configured to receive optical signals propagating through said second semiconductor layer and generate electrical signals in response thereto, said multiplication region being configured to amplify said electrical signals generated by said absorption region, wherein said absorption region comprises a material selected from the group of:
- InAs, InSb, InP, In.sub.x Ga.sub.1-x As, InAs.sub.y P.sub.1-y, InP.sub.y As.sub.1-y, In.sub.x Ga.sub.1-x N, In.sub.x Ga.sub.1-x As.sub.y Sb.sub.1-y, In.sub.x Ga.sub.1-y As.sub.y P.sub.1-y, In.sub.x Ga.sub.y Al.sub.1-x-y As, Pb.sub.x Sn.sub.1-x Te, AlSb, AlAs, Al.sub.x Ga.sub.1-x N, ZnSe, ZnTe, BN, Ge, GaP, GaAs, GaSb, Ga.sub.x Al.sub.1-x As, GaAs.sub.y P.sub.1-y, Ga.sub.x In.sub.1-x P, Ga.sub.x In.sub.1-x Sb, Hg.sub.x Cd.sub.1-x Te,
- wherein x and y are numbers satisfying:
- 0.ltoreq.x.ltoreq.1;
- and 0.ltoreq.y.ltoreq.1.
4 more elements
A photodetector, comprising:
- a first semiconductor layer including an absorption region, said first semiconductor layer having a first lattice constant;
- and
- a second semiconductor layer having a second lattice constant different than said first lattice constant and including a multiplication region, said first semiconductor layer contacting said second semiconductor layer, said absorption region being configured to receive optical signals propagating through said second semiconductor layer and generate electrical signals in response thereto, said multiplication region being configured to amplify said electrical signals generated by said absorption region, wherein said multiplication region comprises a group IV element.
A photodetector, comprising:
- a first semiconductor layer including an absorption region, said first semiconductor layer having a first lattice constant;
- and
- a second semiconductor layer having a second lattice constant different than said first lattice constant and including a multiplication region, said first semiconductor layer contacting said second semiconductor layer, said absorption region being configured to receive optical signals propagating through said second semiconductor layer and generate electrical signals in response thereto, said multiplication region being configured to amplify said electrical signals generated by said absorption region, said photodetector having a gain in excess of 10, wherein said absorption region comprises a material selected from the group of:
- InAs, InSb, InP, In.sub.x Ga.sub.1-x As, InAs.sub.y P.sub.1-y, InP.sub.y As.sub.1-y, In.sub.x Ga.sub.1-x N, In.sub.x Ga.sub.1-x As.sub.y Sb.sub.1-y, In.sub.x Ga.sub.1-x As.sub.y P.sub.1-y, In.sub.x Ga.sub.y Al.sub.1-x-y As, Pb.sub.x Sn.sub.1-x Te, AlSb, AlAs, Al.sub.x Ga.sub.1-x N, ZnSe, ZnTe, BN, Ge, GaP, GaAs, GaSb, Ga.sub.x Al.sub.1-x As, GaAs.sub.y P.sub.1-y, Ga.sub.x In.sub.1-x P, Ga.sub.x In.sub.1-x Sb, Hg.sub.x Cd.sub.1-x Te,
- wherein x and y are numbers satisfying:
- 0.ltoreq.x.ltoreq.1;
- 0.ltoreq.y.ltoreq.1.
4 more elements
A photodetector, comprising:
- a first semiconductor layer including an absorption region, said first semiconductor layer having a first lattice constant;
- and
- a second semiconductor layer having a second lattice constant different than said first lattice constant and including a multiplication region, said first semiconductor layer contacting said second semiconductor layer, said absorption region being configured to receive optical signals propagating through said second semiconductor layer and generate electrical signals in response thereto, said multiplication region being configured to amplify said electrical signals generated by said absorption region, said photodetector having a gain in excess of 10, wherein said multiplication region comprises a group IV element.
A photodetector, comprising:
- a substrate;
- a first semiconductor layer comprising silicon provided on said substrate;
- a second semiconductor layer comprising indium gallium arsenide provided on said first semiconductor layer;
- a third semiconductor layer comprising a group III-V semiconductor provided on said second semiconductor layer;
- a first electrical contact layer coupled to said substrate;
- and
- a second electrical contact layer coupled to said third semiconductor layer, wherein said second semiconductor layer comprises an absorption region configured to receive optical signals and generate electrical signals in response thereto, and said first semiconductor layer comprises a multiplication region configured to amplify said electrical signals.
4 more elements
Dependencies are inferred from the claim text.