Solid-state imaging device with film of low hydrogen permeability including openings

A solid-state imaging device comprising:

• a semiconductor substrate having a sensor disposed in a surface layer on an entrance surface thereof for receiving incident light;
• a gate electrode disposed on a region of the entrance surface of said semiconductor substrate except for a region corresponding to said sensor, with an insulating film interposed between said gate electrode and said semiconductor substrate;
• an intermediate-refractive-index film disposed on the entrance surface of said semiconductor substrate and an entrance surface of said gate electrode either directly or with an insulating film interposed therebetween, said intermediate-refractive-index film having a refractive index lower than said semiconductor substrate and a low hydrogen permeability;
• and
• a thin film disposed on an entrance surface of said intermediate-refractive-index film and having a refractive index lower than said intermediate-refractive-index film, said thin film being permeable to hydrogen;
• a contact hole defined through said thin film and said intermediate-refractive-index film and extending from an entrance surface of said thin film in a region thereof corresponding to said gate electrode to the entrance surface of said gate electrode;
• an electrically conductive material filled in said contact hole and permeable to hydrogen;
• and
• a light blocking film disposed on the region of the entrance surface of said thin film which corresponds to at least said gate electrode, said light blocking film being made of an electrically conductive material.