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US 6,147,388 AGranted
Polycide gate structure with intermediate barrier
AssigneeLucent Technologies Inc.
InventorsYi Ma, Sailesh Mansinh Merchant, Minseok Oh, Pradip Kumar Roy
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Abstract
A CMOS gate structure comprises a multilayered polysilicon structure and a deposited silicide layer, with a nitridized silicide barrier layer formed therebetween. The multilayered polysilicon will exhibit a relatively large grain size and uniform structure. The deposited silicide layer is annealed to mimic the polysilicon grain size and structure. The combination of the tailored grain structure with the intermediate barrier layer results in a gate structure that is essentially impervious to subsequent dopant diffusions.
Claims4
A CMOS gate structure comprising
- a multilayered polysilicon structure;
- a relatively thin nitridized silicide barrier layer formed to cover the multilayered polysilicon structure;
- and
- a silicide layer deposited to cover the relatively thin nitridized silicide barrier layer and annealed to exhibit a grain size and structure similar to the multilayered polysilicon structure.
1 more element
Dependencies are inferred from the claim text.