Field effect-controllable semiconductor component

A field effect-controllable semiconductor component, comprising:

• a semiconductor body having:
• a) an upper surface and a lower surface;
• b) an inner zone of a first conduction type adjoining said upper surface of said semiconductor body;
• c) an anode zone of a second conduction type adjoining said lower surface of said semiconductor body;
• d) a shielding zone of the first conduction type surrounded by said inner zone, said shielding zone having a higher doping concentration than said inner zone and having a lower edge;
• e) at least one base zone of the second conduction type embedded in said upper surface of said semiconductor body and embedded in said shielding zone;
• f) at least one non-connected, floating region of high conductivity of the second conduction type disposed in the vicinity of said inner zone, said floating region having a lower edge deeper in said inner zone than said lower edge of said shielding zone;
• and
• g) at least one emitter zone of the first conduction type embedded in said base zone;
• an emitter electrode disposed above said upper surface of said semiconductor body and conductively connected to said emitter zone;
• a collector electrode disposed below said lower surface of said semiconductor body and conductively connected to said anode zone;
• and
• a gate electrode disposed above said upper surface of said semiconductor body and covering parts of said base zone and of said emitter zone, with an insulating clearance.