Active matrix display device

An active matrix display device comprising:

• a substrate having an insulting surface;
• an active matrix circuit over said substrate, said matrix circuit comprising:
• at least one thin film transistor having source and drain regions and a channel region therebetween in a semiconductor film, and a gate electrode adjacent to said channel region with a gate insulting film interposed therebetween;
• a pixel electrode formed over said substrate and electrically connected to one of said source and drain regions;
• a capacitor formed between a wiring and a portion of said pixel electrode with an oxide film interposed therebetween, said oxide film comprising an oxidized surface of said wiring;
• and
• a peripheral circuit of a signal output utilized for a driving circuit of said active matrix display device, said peripheral circuit comprising at least a first thin film transistor for controlling strong electric current and a second thin film transistor for a logic circuit.

An active matrix display device comprising:

• a substrate having an insulating surface;
• an active matrix circuit over said substrate, said active matrix circuit comprising:
• at least one thin film transistor having source and drain regions and a channel region therebetween in a semiconductor film, and a gate electrode over said channel region with a gate insulating film interposed therebetween;
• a pixel electrode formed over said substrate and electrically connected to one of said source and drain regions;
• a capacitor formed between a wiring and a portion of said pixel electrode with an oxide film interposed therebetween, said oxide film comprising an oxidized surface of said wiring;
• and
• a CMOS circuit for driving said active matrix circuit formed over said substrate, said CMOS circuit comprising at least a pair of N-channel and P-channel thin film transistors.

An active matrix display device comprising:

• a substrate having an insulating surface;
• an active matrix circuit over said substrate, said active matrix circuit comprising:
• at least one thin film transistor having source and drain regions and a channel region therebetween in a semiconductor film, and a gate electrode over said channel region with a gate insulating film interposed therebetween;
• a pixel electrode formed over said substrate and electrically connected to one of said source and drain regions;
• a capacitor formed between a wiring and a portion of said pixel electrode with an oxide film interposed therebetween, said oxide film comprising an oxidized surface of said wiring;
• and
• a peripheral circuit of a signal output utilized for a driving circuit of said active matrix display device, said peripheral circuit comprising at least a first thin film transistor for controlling strong electric current and a second thin film transistor for a logic circuit.

An active matrix display device comprising:

• a substrate having an insulating surface;
• an active matrix circuit over said substrate, said active matrix circuit comprising:
• at least one thin film transistor having source and drain regions and a channel region therebetween in a semiconductor film comprising crystalline silicon, and a gate electrode adjacent to said channel region with a gate insulating film interposed therebetween;
• a transparent conductive film formed over said substrate and electrically connected to one of said source and drain regions;
• a capacitor formed between a wiring and a portion of said transparent conductive film with an oxide film interposed therebetween, said oxide film comprising an oxidized surface of said wiring;
• and
• a CMOS circuit for driving said active matrix circuit formed over said substrate, said CMOS circuit comprising at least a pair of N-channel and P-channel thin film transistors.

An active matrix display device comprising:

• a substrate having an insulating surface;
• an active matrix circuit over said substrate, said active matrix circuit comprising:
• at least one thin film transistor having source and drain regions and a channel region therebetween in a semiconductor film comprising crystalline silicon, and a gate electrode adjacent to said channel region with a gate insulating film interposed therebetween;
• a transparent conductive film formed over said substrate and electrically connected to one of said source and drain regions;
• a capacitor formed between a wiring and a portion of said transparent conductive film with an oxide film interposed therebetween, said oxide film comprising an oxidized surface of said wiring;
• and
• a peripheral circuit of a signal output utilized for a driving circuit fo said active matrix display device, said peripheral circuit comprising at least a first thin film transistor for controlling strong electric current and a second thin film transistor for a logic circuit.

An active matrix display device comprising:

• a substrate having an insulating surface;
• an active matrix circuit over said substrate, said active matrix circuit comprising:
• at least one thin film transistor having source and drain regions and a channel region therebetween in a semiconductor film, and a gate electrode adjacent to said channel region with a gate insulating film interposed therebetween;
• a pixel electrode formed over said substrate and electrically connected to one of said source and drain regions;
• a capacitor formed between a wiring and a portion of said pixel electrode with an anodic oxide film interposed therebetween, said anodic oxide film comprising an oxidized surface of said wiring;
• and
• a CMOS circuit for driving said active matrix circuit formed over said substrate, said CMOS circuit comprising at least a pair of N-channel and P-channel thin film transistors.

An active matrix display device comprising:

• a substrate having an insulating surface;
• an active matrix circuit over said substrate, said active matrix circuit comprising:
• at least one thin film transistor having source and drain regions and a channel region therebetween within a semiconductor film, and a gate electrode adjacent to said channel region with a gate insulating film interposed therebetween.
• a pixel electrode formed over said substrate and electrically connected to one of said source and drain regions;
• a capacitor formed between a wiring and a portion of said pixel electrode with an anodic oxide film interposed therebetween, said anodic oxide film comprising an oxidized surface of said wiring;
• and
• a peripheral circuit of a signal output utilized for a driving circuit of said active matrix display device, said peripheral circuit comprising at least a first thin film transistor for controlling strong electric current and a second thin film transistor for a logic circuit.

An active matrix display device comprising:

• a substrate having an insulating surface;
• an active matrix circuit over said substrate, said active matrix circuit comprising;
• at least one thin film transistor having source and drain regions and a channel region therebetween in a semiconductor film, and a gate electrode adjacent to said channel region with a gate insulating film interposed therebetween;
• a pixel electrode formed over said substrate and electrically connected to one of said source and drain regions;
• a capacitor formed between a wiring and a portion of said pixel electrode with an oxide film interposed therebetween, said oxide film comprising an oxidized surface of said wiring;
• wherein said oxide film has a thickness less than 1000 .ANG.;
• and
• a CMOS circuit for driving said active matrix circuit formed over said substrate, said CMOS circuit comprising at least a pair of N-channel and P-channel thin film transistors.

An active matrix display device comprising:

• a substrate having an insulating surface;
• an active matrix circuit over said substrate, said active matrix circuit comprising:
• at least one thin film transistor having source and drain regions and a channel region therebetween in a semiconductor film, and a gate electrode adjacent to said channel region with a gate insulating film interposed therebetween;
• a pixel electrode formed over said substrate and electrically connected to one of said source and drain regions;
• a capacitor formed between a wiring and a portion fo said pixel electrode with an oxide film interposed therebetween, said oxide film comprising an oxidized surface of said wiring;
• wherein said oxide film has a thickness less than 1000 .ANG.;
• and
• a peripheral circuit of a signal output utilized for a driving circuit of said active matrix display device, said peripheral circuit comprising at least a first thin film transistor for controlling strong electric current and a second thin film transistor for a logic circuit.