Image sensor and method for fabricating the same

An image sensor comprising:

• a) a substrate;
• b) a first charge transfer region formed in a surface of the substrate in a first direction;
• c) a plurality of photoelectric conversion regions formed in the surface of the substrate and next to said first charge transfer region, said first charge transfer region receiving charges from said plurality of photoelectric conversion regions,
• d) a plurality of transfer gates formed over the first charge transfer, each transfer gate formed next to a corresponding photoelectric conversion region, wherein each transfer gate comprises:
• i) a first insulation film formed on the first charge transfer region;
• ii) a first conductor formed on the first insulation film and coupled for receiving a control signal;
• iii) a second insulation film formed on the first conductor;
• and
• e) a second conductor, serving as an electromagnetic shielding layer, formed over said plurality of transfer gates and the first charge transfer region, the second insulation film, wherein said second conductor is coupled to said plurality of photoelectric conversion regions and includes a portion formed on the well and extending between the first insulation films and the plurality of photoelectric conversion regions, wherein the portion does not overlap a corresponding photoelectric conversion regions;
• and
• a second charge transfer region formed in the surface of the substrate and receiving charges from said first charge transfer region.