Voltage-driven power semiconductor device

A voltage-driven power semiconductor device, comprising:

• a voltage-driven power semiconductor element which is formed as a chip and has a collector on one surface thereof and an emitter on another surface opposing said one surface;
• a plate-like collector electrode terminal arranged on a collector side of the power semiconductor element and electrically connected to the collector;
• connection means having an inductance component electrically connected to the emitter of the power semiconductor element;
• and
• a plate-like emitter electrode terminal arranged on an emitter side of the power semiconductor element and electrically connected to the connection means.

A voltage-driven power semiconductor device, comprising:

• an injection enhanced gate transistor (IEGT) having a collector on one surface thereof and an emitter on another surface opposing said one surface, said IEGT having a greater emitter-side carrier accumulation effect than that of an insulated gate bipolar transistor (IGBT) in an ON state;
• a plate-like collector electrode terminal arranged on a collector side of the power semiconductor element and electrically connected to the collector;
• connection means having an inductance component electrically connected to the emitter of the power semiconductor element;
• and
• a plate-like emitter electrode terminal arranged on an emitter side of the power semiconductor element and electrically connected to the connection means.

A voltage-driven power semiconductor device, comprising:

• a plurality of injection enhanced gate transistors (IEGTs ) each of which is formed as chip and has a collector on one surface thereof and an emitter on another surface opposing said one surface, each of said IEGTs having a greater emitter-side carrier accumulation effect than that of an insulated gate bipolar transistor (IGBT) in an ON state;
• a plate-like collector electrode terminal arranged on a collector side of each of the IEGTs and electrically connected to the collector of each IEGT;
• a plurality of connection means having inductance components electrically connected to the emitters of the IEGTs, respectively;
• and
• a plate-like emitter electrode terminal arranged on an emitter side of each of the IEGTs and electrically connected to said plurality of connection means, respectively.

A voltage-driven power semiconductor device, comprising:

• a voltage-driven power semiconductor element which is formed as a chip and has a collector on one surface thereof and an emitter on another surface opposing said one surface;
• a plate-like collector electrode terminal arranged on a collector side of the power semiconductor element and electrically connected to the collector;
• and
• a plate-like emitter electrode terminal arranged on an emitter side of the power semiconductor element and electrically connected to the connection means,
• wherein said power semiconductor device is fabricated as a press-contacting type package,
• the plate-like collector electrode terminal and the collector of the power semiconductor element are electrically connected together by exerting pressure on the collector with the collector electrode terminal, and
• the plate-like emitter electrode terminal and the emitter of the power semiconductor element are electrically connected together by exerting pressure on the emitter with the emitter electrode terminal.