Optoelectronic semiconductor component

An optoelectronic semiconductor component, comprising:

• a semiconductor substrate;
• a contact layer connected to said semiconductor substrate;
• an active zone provided on said semiconductor substrate for generating an electromagnetic radiation in said active zone when a current flows through said active zone;
• a poorly dopable semiconductor layer associated with said active zone;
• and
• a reverse-biased layer sequence having a heavily p-doped first degenerated junction layer containing BeTe and having a heavily n-doped second degenerated junction layer, said reverse-biased layer sequence serving as an electrical charge carrier source and being disposed between said poorly dopable semiconductor layer and said contact layer, and said heavily p-doped first degenerated junction layer disposed between said poorly dopable semiconductor layer and said heavily n-doped second degenerated junction layer.