Nitride semiconductor light-emitting device and manufacturing method of the same
AssigneeShowa Denko K.K.
InventorTakashi Udagawa
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Abstract
A nitride semiconductor light emitting device which uses as a light emitting layer an indium-containing group-III nitride semiconductor layer of a multi-phase structure composed of a main phase and sub-phases having different indium contents is characterized in that the sub-phases are mainly formed of crystal whose boundary with the main phase is surrounded by a strained layer.
Claims12
A nitride semiconductor light-emitting device which uses as a light emitting layer an indium-containing group-III nitride semiconductor layer of a multi-phase structure composed of a main phase and sub-phases having different indium contents, wherein said sub-phases are mainly formed of crystal whose boundary with the main phase is surrounded by a strained layer.
Dependencies are inferred from the claim text.